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Nanotechnology
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January 19, 2019
Toward electrically driven semiconductor nanowire lasers
Yunyan Zhang, Dhruv Saxena, Martin Aagesen, et al.
Nanoscale Research Letters
|
September 2, 2011
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
Morten Hannibal Madsen, Martin Aagesen, Peter Krogstrup, et al.
Physical Review Letters
|
April 27, 2011
Impact of the liquid phase shape on the structure of III-V nanowires
Peter Krogstrup, Stefano Curiotto, Erik Johnson, et al.
Nano Letters
|
May 24, 2017
Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer
Pamela Jurczak, Yunyan Zhang, Jiang Wu, et al.
Nature Communications
|
February 21, 2013
Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
Jeppe V Holm, Henrik I Jørgensen, Peter Krogstrup, et al.
Nano Letters
|
August 1, 2013
Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy
Yunyan Zhang, Martin Aagesen, Jeppe V Holm, et al.
Nano Letters
|
June 28, 2014
Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy
Yunyan Zhang, Jiang Wu, Martin Aagesen, et al.
Nano Letters
|
March 31, 2015
Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires
Yunyan Zhang, Ana M Sanchez, Jiang Wu, et al.
Nature Nanotechnology
|
July 26, 2008
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
Martin Aagesen, Erik Johnson, Claus B Sørensen, et al.
Nano Letters
|
October 22, 2009
Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements
Peter Krogstrup, Jun Yamasaki, Claus B Sørensen, et al.
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of 3
Search research articles
Search
Showing results (1-10 of 21) with videos related to
Sort By:
Page
of 3
Nanotechnology
|
January 19, 2019
Toward electrically driven semiconductor nanowire lasers
Yunyan Zhang, Dhruv Saxena, Martin Aagesen, et al.
Nanoscale Research Letters
|
September 2, 2011
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
Morten Hannibal Madsen, Martin Aagesen, Peter Krogstrup, et al.
Physical Review Letters
|
April 27, 2011
Impact of the liquid phase shape on the structure of III-V nanowires
Peter Krogstrup, Stefano Curiotto, Erik Johnson, et al.
Nano Letters
|
May 24, 2017
Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer
Pamela Jurczak, Yunyan Zhang, Jiang Wu, et al.
Nature Communications
|
February 21, 2013
Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
Jeppe V Holm, Henrik I Jørgensen, Peter Krogstrup, et al.
Nano Letters
|
August 1, 2013
Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy
Yunyan Zhang, Martin Aagesen, Jeppe V Holm, et al.
Nano Letters
|
June 28, 2014
Self-catalyzed ternary core-shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy
Yunyan Zhang, Jiang Wu, Martin Aagesen, et al.
Nano Letters
|
March 31, 2015
Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires
Yunyan Zhang, Ana M Sanchez, Jiang Wu, et al.
Nature Nanotechnology
|
July 26, 2008
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
Martin Aagesen, Erik Johnson, Claus B Sørensen, et al.
Nano Letters
|
October 22, 2009
Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements
Peter Krogstrup, Jun Yamasaki, Claus B Sørensen, et al.
Page
of 3