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ACS Applied Materials & Interfaces
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September 17, 2020
Frequency Mixing with HfO<sub>2</sub>-Based Ferroelectric Transistors
Halid Mulaosmanovic, Stefan Dünkel, Martin Trentzsch, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 26, 2011
Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation
Ebrahim Nadimi, Rolf Ottking, Philipp Plänitz, et al.
Nanomaterials (Basel, Switzerland)
|
February 27, 2020
Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction
Maximilian Lederer, Thomas Kämpfe, Norman Vogel, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 3) with videos related to
Sort By:
Page
of 1
ACS Applied Materials & Interfaces
|
September 17, 2020
Frequency Mixing with HfO<sub>2</sub>-Based Ferroelectric Transistors
Halid Mulaosmanovic, Stefan Dünkel, Martin Trentzsch, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 26, 2011
Interaction of oxygen vacancies and lanthanum in Hf-based high-k dielectrics: an ab initio investigation
Ebrahim Nadimi, Rolf Ottking, Philipp Plänitz, et al.
Nanomaterials (Basel, Switzerland)
|
February 27, 2020
Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction
Maximilian Lederer, Thomas Kämpfe, Norman Vogel, et al.
Page
of 1