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Marvin H White

Showing results (1-10 of 7) with videos related to

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Journal of Neuroscience Methods|October 19, 2002
Parameter-extraction of a two-compartment model for whole-cell data analysisSantosh Pandey, Marvin H White
Computer Methods and Programs in Biomedicine|November 23, 2006
Simulation of biological ion channels with technology computer-aided designSantosh Pandey, Akwete Bortei-Doku, Marvin H White
Materials (Basel, Switzerland)|October 14, 2022
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency SwitchingShengnan Zhu, Tianshi Liu, Junchong Fan, et al.
Materials (Basel, Switzerland)|September 9, 2022
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETsShengnan Zhu, Tianshi Liu, Junchong Fan, et al.
Micromachines|April 26, 2025
Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered MethodMonikuntala Bhattacharya, Michael Jin, Hengyu Yu, et al.
Micromachines|February 24, 2024
An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench StructuresJiashu Qian, Limeng Shi, Michael Jin, et al.
Materials (Basel, Switzerland)|April 13, 2024
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETsJiashu Qian, Limeng Shi, Michael Jin, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Journal of Neuroscience Methods|October 19, 2002
Parameter-extraction of a two-compartment model for whole-cell data analysisSantosh Pandey, Marvin H White
Computer Methods and Programs in Biomedicine|November 23, 2006
Simulation of biological ion channels with technology computer-aided designSantosh Pandey, Akwete Bortei-Doku, Marvin H White
Materials (Basel, Switzerland)|October 14, 2022
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency SwitchingShengnan Zhu, Tianshi Liu, Junchong Fan, et al.
Materials (Basel, Switzerland)|September 9, 2022
Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETsShengnan Zhu, Tianshi Liu, Junchong Fan, et al.
Micromachines|April 26, 2025
Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered MethodMonikuntala Bhattacharya, Michael Jin, Hengyu Yu, et al.
Micromachines|February 24, 2024
An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench StructuresJiashu Qian, Limeng Shi, Michael Jin, et al.
Materials (Basel, Switzerland)|April 13, 2024
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETsJiashu Qian, Limeng Shi, Michael Jin, et al.
Pageof 1