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Mathieu Luisier

Showing results (1-10 of 44) with videos related to

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Chemical Society Reviews|April 15, 2014
Atomistic simulation of transport phenomena in nanoelectronic devicesMathieu Luisier
ACS Applied Materials & Interfaces|November 21, 2014
Lithiation of tin oxide: a computational studyAndreas Pedersen, Mathieu Luisier
Nano Letters|January 6, 2016
Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire TransistorsReto Rhyner, Mathieu Luisier
Nanoscale Advances|September 22, 2022
Electro-thermal transport in disordered nanostructures: a modeling perspectiveFabian Ducry, Jan Aeschlimann, Mathieu Luisier
ACS Nano|March 22, 2023
An Atomistic Model of Field-Induced Resistive Switching in Valence Change MemoryManasa Kaniselvan, Mathieu Luisier, Marko Mladenović
Journal of Physics. Condensed Matter : an Institute of Physics Journal|September 28, 2020
Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function studyMichael O'Donovan, Mathieu Luisier, Eoin P O'Reilly, et al.
The Journal of Chemical Physics|February 1, 2016
A generalized Poisson solver for first-principles device simulationsMohammad Hossein Bani-Hashemian, Sascha Brück, Mathieu Luisier, et al.
Nano Letters|May 14, 2019
Electron Transport through Metal/MoS<sub>2</sub> Interfaces: Edge- or Area-Dependent Process?Áron Szabó, Achint Jain, Markus Parzefall, et al.
Materials (Basel, Switzerland)|February 15, 2022
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS<sub>2</sub> TransistorsSara Fiore, Cedric Klinkert, Fabian Ducry, et al.
Nano Letters|December 23, 2016
Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon NanowiresShyamprasad N Raja, Reto Rhyner, Kantawong Vuttivorakulchai, et al.
Pageof 5

Showing results (1-10 of 44) with videos related to

Sort By:
Pageof 5
Chemical Society Reviews|April 15, 2014
Atomistic simulation of transport phenomena in nanoelectronic devicesMathieu Luisier
ACS Applied Materials & Interfaces|November 21, 2014
Lithiation of tin oxide: a computational studyAndreas Pedersen, Mathieu Luisier
Nano Letters|January 6, 2016
Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire TransistorsReto Rhyner, Mathieu Luisier
Nanoscale Advances|September 22, 2022
Electro-thermal transport in disordered nanostructures: a modeling perspectiveFabian Ducry, Jan Aeschlimann, Mathieu Luisier
ACS Nano|March 22, 2023
An Atomistic Model of Field-Induced Resistive Switching in Valence Change MemoryManasa Kaniselvan, Mathieu Luisier, Marko Mladenović
Journal of Physics. Condensed Matter : an Institute of Physics Journal|September 28, 2020
Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function studyMichael O'Donovan, Mathieu Luisier, Eoin P O'Reilly, et al.
The Journal of Chemical Physics|February 1, 2016
A generalized Poisson solver for first-principles device simulationsMohammad Hossein Bani-Hashemian, Sascha Brück, Mathieu Luisier, et al.
Nano Letters|May 14, 2019
Electron Transport through Metal/MoS<sub>2</sub> Interfaces: Edge- or Area-Dependent Process?Áron Szabó, Achint Jain, Markus Parzefall, et al.
Materials (Basel, Switzerland)|February 15, 2022
Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS<sub>2</sub> TransistorsSara Fiore, Cedric Klinkert, Fabian Ducry, et al.
Nano Letters|December 23, 2016
Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon NanowiresShyamprasad N Raja, Reto Rhyner, Kantawong Vuttivorakulchai, et al.
Pageof 5