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Nature Materials|December 18, 2012
A scalable neuristor built with Mott memristorsMatthew D Pickett, Gilberto Medeiros-Ribeiro, R Stanley WilliamsNanotechnology|January 25, 2011
Lognormal switching times for titanium dioxide bipolar memristors: origin and resolutionGilberto Medeiros-Ribeiro, Frederick Perner, Richard Carter, et al.Nano Letters|January 27, 2007
Thermodynamics of coherently-strained GexSi1-x nanocrystals on Si(001): alloy composition and island formationGilberto Medeiros-Ribeiro, R Stanley WilliamsNanotechnology|September 4, 2013
Phase transitions enable computational universality in neuristor-based cellular automataMatthew D Pickett, R Stanley WilliamsNanotechnology|May 4, 2012
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevicesMatthew D Pickett, R Stanley WilliamsNanotechnology|May 17, 2011
Impact of geometry on the performance of memristive nanodevicesQiangfei Xia, Matthew D Pickett, J Joshua Yang, et al.ACS Nano|February 14, 2012
Continuous electrical tuning of the chemical composition of TaO(x)-based memristorsFeng Miao, Wei Yi, Ilan Goldfarb, et al.Nanotechnology|November 24, 2011
Measuring the switching dynamics and energy efficiency of tantalum oxide memristorsJohn Paul Strachan, Antonio C Torrezan, Gilberto Medeiros-Ribeiro, et al.Nanotechnology|November 11, 2011
Sub-nanosecond switching of a tantalum oxide memristorAntonio C Torrezan, John Paul Strachan, Gilberto Medeiros-Ribeiro, et al.Nanotechnology|May 17, 2011
Observation of two resistance switching modes in TiO2 memristive devices electroformed at low currentFeng Miao, J Joshua Yang, Julien Borghetti, et al.Pageof 12