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Chemical Reviews|June 26, 2025
Pr1-xCaxMnO3-Based Memristive Heterostructures: Basic Mechanisms and ApplicationsMax Buczek, Zoe Moos, Alexander Gutsche, et al.
Faraday Discussions|February 12, 2019
Introduction to new memory paradigms: memristive phenomena and neuromorphic applicationsRainer Waser, Regina Dittmann, Stephan Menzel, et al.
Frontiers in Neuroscience|July 19, 2021
Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural NetworksAlexander Gutsche, Sebastian Siegel, Jinchao Zhang, et al.
Frontiers in Neuroscience|June 24, 2021
Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy PatternsChristopher Bengel, Felix Cüppers, Melika Payvand, et al.
Scientific Reports|November 11, 2014
Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holographyAstrid Marchewka, David Cooper, Christian Lenser, et al.
Advanced Materials (Deerfield Beach, Fla.)|April 8, 2014
Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devicesAnja Herpers, Christian Lenser, Chanwoo Park, et al.
Advanced Materials (Deerfield Beach, Fla.)|April 19, 2017
Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEMDavid Cooper, Christoph Baeumer, Nicolas Bernier, et al.
Faraday Discussions|October 27, 2018
Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devicesChristoph Baeumer, Thomas Heisig, Benedikt Arndt, et al.
Nano Letters|September 23, 2018
In-Gap States and Band-Like Transport in Memristive DevicesChristoph Baeumer, Carsten Funck, Andrea Locatelli, et al.
Nanoscale|September 26, 2013
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cellsStephan Menzel, Rainer Waser
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