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Mayur Chaudhary

Showing results (11-20 of 19) with videos related to

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RSC Advances|May 6, 2022
Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic propertiesAswin Kumar Anbalagan, Chun-Yu Jao, Maliya Syabriyana, et al.
ACS Applied Materials & Interfaces|June 11, 2024
Rational Design of Phase-Engineered WS<sub>2</sub>/WSe<sub>2</sub> Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER PerformanceBushra Rehman, K M M D K Kimbulapitiya, Manisha Date, et al.
Small Methods|November 20, 2025
Conformal Encapsulation of Wafer-Scale Molybdenum Disulfide Field-Effect Transistors by Plasma-Induced Molecular PolymerizationMing-Jin Liu, Yong Wang, Ruei-Hong Cyu, et al.
ACS Nano|December 9, 2025
Atomically Resolved Defects Modulate Electronic Structure in Plasma-Assisted 2D Janus MoSSe MonolayersZi-Liang Yang, Yu-Chieh Lin, Mayur Chaudhary, et al.
ACS Applied Materials & Interfaces|July 10, 2023
Phase/Interfacial-Engineered Two-Dimensional-Layered WSe<sub>2</sub> Films by a Plasma-Assisted Selenization Process: Modulation of Oxygen Vacancies in Resistive Random-Access MemoryMayur Chaudhary, Yu-Chuan Shih, Shin-Yi Tang, et al.
ACS Nano|April 8, 2024
Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping LayersSumayah-Shakil Wani, Chen Chieh Hsu, Yao-Zen Kuo, et al.
ACS Nano|March 23, 2023
Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS<sub>2</sub> Sputtered Few-Layered Thin FilmsAswin Kumar Anbalagan, Fang-Chi Hu, Weng Kent Chan, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 27, 2026
Polarization-Enabled Piezoelectric Tellurium-Selenium (Te<sub>x</sub>Se<sub>1-</sub> <sub>x</sub>) Thin Films for Memory Switching and Artificial Synaptic FunctionsChia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 29, 2025
Revealing Robust Room Temperature Ferromagnetism in Gd-Doped Few-Layered MoS<sub>2</sub> Thin FilmsAswin Kumar Anbalagan, Weng-Kent Chan, Ming-Hsuan Wu, et al.
Pageof 2

Showing results (11-20 of 19) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 19 results.
RSC Advances|May 6, 2022
Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic propertiesAswin Kumar Anbalagan, Chun-Yu Jao, Maliya Syabriyana, et al.
ACS Applied Materials & Interfaces|June 11, 2024
Rational Design of Phase-Engineered WS<sub>2</sub>/WSe<sub>2</sub> Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER PerformanceBushra Rehman, K M M D K Kimbulapitiya, Manisha Date, et al.
Small Methods|November 20, 2025
Conformal Encapsulation of Wafer-Scale Molybdenum Disulfide Field-Effect Transistors by Plasma-Induced Molecular PolymerizationMing-Jin Liu, Yong Wang, Ruei-Hong Cyu, et al.
ACS Nano|December 9, 2025
Atomically Resolved Defects Modulate Electronic Structure in Plasma-Assisted 2D Janus MoSSe MonolayersZi-Liang Yang, Yu-Chieh Lin, Mayur Chaudhary, et al.
ACS Applied Materials & Interfaces|July 10, 2023
Phase/Interfacial-Engineered Two-Dimensional-Layered WSe<sub>2</sub> Films by a Plasma-Assisted Selenization Process: Modulation of Oxygen Vacancies in Resistive Random-Access MemoryMayur Chaudhary, Yu-Chuan Shih, Shin-Yi Tang, et al.
ACS Nano|April 8, 2024
Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping LayersSumayah-Shakil Wani, Chen Chieh Hsu, Yao-Zen Kuo, et al.
ACS Nano|March 23, 2023
Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS<sub>2</sub> Sputtered Few-Layered Thin FilmsAswin Kumar Anbalagan, Fang-Chi Hu, Weng Kent Chan, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 27, 2026
Polarization-Enabled Piezoelectric Tellurium-Selenium (Te<sub>x</sub>Se<sub>1-</sub> <sub>x</sub>) Thin Films for Memory Switching and Artificial Synaptic FunctionsChia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 29, 2025
Revealing Robust Room Temperature Ferromagnetism in Gd-Doped Few-Layered MoS<sub>2</sub> Thin FilmsAswin Kumar Anbalagan, Weng-Kent Chan, Ming-Hsuan Wu, et al.
Pageof 2