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Meeghage Madusanka Perera

Showing results (1-10 of 5) with videos related to

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Nano Letters|February 5, 2016
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 TransistorsHsun-Jen Chuang, Bhim Chamlagain, Michael Koehler, et al.
ACS Nano|April 18, 2013
Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gatingMeeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang, et al.
Nano Letters|May 22, 2014
High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contactsHsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, et al.
Angewandte Chemie (International Ed. in English)|November 5, 2014
The mechanisms of rectification in Au|molecule|Au devices based on Langmuir-Blodgett monolayers of iron(III) and copper(II) surfactantsLanka D Wickramasinghe, Shivnath Mazumder, Sunalee Gonawala, et al.
ACS Nano|April 16, 2014
Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrateBhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Nano Letters|February 5, 2016
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 TransistorsHsun-Jen Chuang, Bhim Chamlagain, Michael Koehler, et al.
ACS Nano|April 18, 2013
Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gatingMeeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang, et al.
Nano Letters|May 22, 2014
High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contactsHsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, et al.
Angewandte Chemie (International Ed. in English)|November 5, 2014
The mechanisms of rectification in Au|molecule|Au devices based on Langmuir-Blodgett monolayers of iron(III) and copper(II) surfactantsLanka D Wickramasinghe, Shivnath Mazumder, Sunalee Gonawala, et al.
ACS Nano|April 16, 2014
Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrateBhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, et al.
Pageof 1