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ACS Applied Electronic Materials|March 2, 2026
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated TemperaturesNashrah Afroze, Jihoon Choi, Salma Soliman, et al.
Nano Letters|June 13, 2025
Ion-Assisted Nanoscale Material Engineering in Atomic LayersHossein Taghinejad, Mohammad Taghinejad, Sajjad Abdollahramezani, et al.
ACS Nano|June 17, 2016
Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical SpectroscopyKai Wang, Bing Huang, Mengkun Tian, et al.
ACS Nano|November 16, 2018
Defect-Mediated Alloying of Monolayer Transition-Metal DichalcogenidesHossein Taghinejad, Daniel A Rehn, Christine Muccianti, et al.
ACS Nano|May 5, 2020
Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal DichalcogenidesHossein Taghinejad, Mohammad Taghinejad, Ali A Eftekhar, et al.
Nature Communications|December 6, 2025
Sharp spectroscopic fingerprints of disorder in an incompressible magnetic stateChaebin Kim, Sumedh Rathi, Naipeng Zhang, et al.
Nano Letters|July 15, 2016
Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x CrystalsMasoud Mahjouri-Samani, Liangbo Liang, Akinola Oyedele, et al.
Science Advances|June 8, 2019
Strain tolerance of two-dimensional crystal growth on curved surfacesKai Wang, Alexander A Puretzky, Zhili Hu, et al.
Nano Letters|March 5, 2026
Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric StackLance Fernandes, Stuart Wodzro, Prasanna Venkatesan, et al.
ACS Applied Materials & Interfaces|September 19, 2022
Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor StructuresNujhat Tasneem, Harshil Kashyap, Kisung Chae, et al.
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