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Scientific Reports|September 27, 2017
Oxygen Vacancy in WO3 Film-based FET with Ionic Liquid GatingHossein Kalhori, Michael Coey, Ismaeil Abdolhosseini Sarsari, et al.Science Advances|April 26, 2017
Accelerated discovery of new magnets in the Heusler alloy familyStefano Sanvito, Corey Oses, Junkai Xue, et al.Nano Letters|March 10, 2016
The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide InterfacesZhen Huang, Kun Han, Shengwei Zeng, et al.Nano Letters|March 25, 2015
Ultrathin BaTiO₃-based ferroelectric tunnel junctions through interface engineeringChangjian Li, Lisen Huang, Tao Li, et al.Scientific Reports|March 13, 2019
Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero-moment half-metalAleksandra Titova, Ciarán Fowley, Eugene Clifford, et al.Inorganic Chemistry|September 30, 2010
Models for the active site in [FeFe] hydrogenase with iron-bound ligands derived from bis-, tris-, and tetrakis(mercaptomethyl)silanesUlf-Peter Apfel, Dennis Troegel, Yvonne Halpin, et al.Nature Nanotechnology|January 9, 2019
A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fieldsHan Yan, Zexin Feng, Shunli Shang, et al.Nature Communications|June 28, 2023
Electrical detection of spin pumping in van der Waals ferromagnetic Cr2Ge2Te6 with low magnetic dampingHongjun Xu, Ke Jia, Yuan Huang, et al.Pageof 1