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Michael Waltl

Showing results (1-10 of 12) with videos related to

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Micromachines|August 6, 2020
Reliability of Miniaturized Transistors from the Perspective of Single-DefectsMichael Waltl
Nature|June 11, 2025
Computer processors built from 2D materialsMichael Waltl, Tibor Grasser
Nature Nanotechnology|July 8, 2024
Fluoride dielectrics for 2D transistorsTibor Grasser, Michael Waltl, Theresia Knobloch
Micromachines|April 29, 2020
Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsBernhard Stampfer, Franz Schanovsky, Tibor Grasser, et al.
Nanomaterials (Basel, Switzerland)|August 26, 2023
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si<sub>3</sub>N<sub>4</sub>)Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Micromachines|August 6, 2020
Reliability of Miniaturized Transistors from the Perspective of Single-DefectsMichael Waltl
Nature|June 11, 2025
Computer processors built from 2D materialsMichael Waltl, Tibor Grasser
Nature Nanotechnology|July 8, 2024
Fluoride dielectrics for 2D transistorsTibor Grasser, Michael Waltl, Theresia Knobloch
Micromachines|April 29, 2020
Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsBernhard Stampfer, Franz Schanovsky, Tibor Grasser, et al.
Nanomaterials (Basel, Switzerland)|August 26, 2023
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si<sub>3</sub>N<sub>4</sub>)Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
ACS Nano|June 8, 2018
Characterization of Single Defects in Ultrascaled MoS<sub>2</sub> Field-Effect TransistorsBernhard Stampfer, Feng Zhang, Yury Yuryevich Illarionov, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 23, 2022
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Michael Waltl, Theresia Knobloch, Konstantinos Tselios, et al.
Nature Electronics|July 5, 2022
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningTheresia Knobloch, Burkay Uzlu, Yury Yu Illarionov, et al.
ACS Nano|March 5, 2025
Two-dimensional Bi<sub>2</sub>SeO<sub>2</sub> and Its Native Insulators for Next-Generation NanoelectronicsPedram Khakbaz, Dominic Waldhoer, Mina Bahrami, et al.
Pageof 2