Showing results (1-10 of 15) with videos related to

Sort By:
Pageof 2
Nanoscale Research Letters|June 20, 2012
The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealingMin-Hung Lee, Pin-Guang Chen
ACS Applied Materials & Interfaces|April 1, 2026
Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (R3) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric MemoryMochamad Januar, Cheng-Hong Liu, Abhijit Aich, et al.
Sensors (Basel, Switzerland)|August 29, 2018
Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, et al.
Surgical Endoscopy|September 5, 2019
Endoscope rotating technique is useful for difficult colorectal endoscopic submucosal dissectionChao-Wen Hsu, Chih-Chien Wu, Min-Hung Lee, et al.
Journal of Nanoscience and Nanotechnology|June 30, 2018
Negative-Capacitance Fin Field-Effect Transistor Beyond the 7-nm NodeKuan-Ting Chen, Yu-Yan Qiu, Ming Tang, et al.
Journal of Combinatorial Chemistry|June 22, 2010
Combinatorial approach to the development of a single mass YVO(4):Bi(3+),Eu(3+) phosphor with red and green dual colors for high color rendering white light-emitting diodesLei Chen, Kuo-Ju Chen, Chun-Che Lin, et al.
Optics Express|February 7, 2018
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: replyYa-Ju Lee, Zu-Po Yang, Pin-Guang Chen, et al.
Optics Express|January 22, 2015
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistorsYa-Ju Lee, Zu-Po Yang, Pin-Guang Chen, et al.
Nanomaterials (Basel, Switzerland)|October 23, 2021
Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1-xZrxO2 DiodesKuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, et al.
ACS Applied Materials & Interfaces|February 20, 2025
Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >1012 Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved EvolutionCheng-Hong Liu, Kuo-Yu Hsiang, Zhi-Xian Li, et al.
Pageof 2