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Applied Ergonomics
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March 23, 2024
Predicting Driver's mental workload using physiological signals: A functional data analysis approach
Chaeyoung Lee, MinJu Shin, David Eniyandunmo, et al.
Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry
|
December 4, 2014
The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition
Dae Woo Kim, Seon Joon Kim, Jae Sung Kim, et al.
Ergonomics
|
July 22, 2024
Utilising raw psycho-physiological data and functional data analysis for estimating mental workload in human drivers
David Eniyandunmo, MinJu Shin, Chaeyoung Lee, et al.
Physical Chemistry Chemical Physics : PCCP
|
May 11, 2017
Triethanolamine doped multilayer MoS<sub>2</sub> field effect transistors
Min-Yeul Ryu, Ho-Kyun Jang, Kook Jin Lee, et al.
Nanoscale
|
November 12, 2013
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation
Junhong Na, Min-Kyu Joo, Minju Shin, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 5) with videos related to
Sort By:
Page
of 1
Applied Ergonomics
|
March 23, 2024
Predicting Driver's mental workload using physiological signals: A functional data analysis approach
Chaeyoung Lee, MinJu Shin, David Eniyandunmo, et al.
Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry
|
December 4, 2014
The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition
Dae Woo Kim, Seon Joon Kim, Jae Sung Kim, et al.
Ergonomics
|
July 22, 2024
Utilising raw psycho-physiological data and functional data analysis for estimating mental workload in human drivers
David Eniyandunmo, MinJu Shin, Chaeyoung Lee, et al.
Physical Chemistry Chemical Physics : PCCP
|
May 11, 2017
Triethanolamine doped multilayer MoS<sub>2</sub> field effect transistors
Min-Yeul Ryu, Ho-Kyun Jang, Kook Jin Lee, et al.
Nanoscale
|
November 12, 2013
Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation
Junhong Na, Min-Kyu Joo, Minju Shin, et al.
Page
of 1