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Optics Express|December 25, 2019
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxyXiaoli Lin, Michele Natrella, James Seddon, et al.
Optics Letters|October 1, 2020
Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on siliconYing Lu, Victoria Cao, Mengya Liao, et al.
Scientific Reports|March 16, 2025
Modelling and optimization of Ge/GaAs uni-travelling carrier photodiodesYutong Zhang, Mengxun Bai, Hui Jia, et al.
Optics Letters|May 24, 2023
Monolithically integrated photonic crystal surface emitters on silicon with a vortex beam by using bound states in the continuumHaochuan Li, Mingchu Tang, Taojie Zhou, et al.
Optics Express|June 13, 2014
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layersMingchu Tang, Siming Chen, Jiang Wu, et al.
Nano Letters|September 12, 2018
Hybrid III-V/IV Nanowires: High-Quality Ge Shell Epitaxy on GaAs CoresHaotian Zeng, Xuezhe Yu, H Aruni Fonseka, et al.
Light, Science & Applications|October 23, 2023
Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on siliconJingwen Ma, Taojie Zhou, Mingchu Tang, et al.
Nano Letters|April 1, 2014
Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substratesJiang Wu, Yanbo Li, Jun Kubota, et al.
Nanoscale|November 14, 2022
Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substratesJunjie Yang, Keshuang Li, Hui Jia, et al.
Optics Express|May 4, 2016
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substratesJonathan R Orchard, Samuel Shutts, Angela Sobiesierski, et al.
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