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Mingrui Ao

Showing results (1-10 of 7) with videos related to

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Micromachines|January 9, 2021
Investigation of the Turbulent Drag Reduction Mechanism of a Kind of Microstructure on Riblet SurfaceMingrui Ao, Miaocao Wang, Fulong Zhu
National Science Review|December 24, 2025
A field-programmable gate array based on wafer-scale 2D semiconductorQicheng Sun, Mingrui Ao, Xiangqi Dong, et al.
Nature|April 2, 2025
A RISC-V 32-bit microprocessor based on two-dimensional semiconductorsMingrui Ao, Xiucheng Zhou, Xinjie Kong, et al.
National Science Review|February 2, 2026
Hybrid-gate MoS<sub>2</sub> 2T0C DRAM for low-power multi-bit storage with high linearityZhejia Zhang, Saifei Gou, Yufei Song, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 20, 2025
Development of Self-Aligned Top-Gate Transistor Arrays on Wafer-Scale Two-Dimensional SemiconductorYuxuan Zhu, Jinshu Zhang, Hui Xie, et al.
Nature Materials|January 14, 2026
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS<sub>2</sub> transistorsSaifei Gou, Yuxuan Zhu, Zhejia Zhang, et al.
Nature Communications|May 25, 2026
Monolithic integration of p- and n-type doped 2D WSe<sub>2</sub> for wafer-scale complementary logic circuitsYan Hu, Shicheng Zeng, Yi Wang, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Micromachines|January 9, 2021
Investigation of the Turbulent Drag Reduction Mechanism of a Kind of Microstructure on Riblet SurfaceMingrui Ao, Miaocao Wang, Fulong Zhu
National Science Review|December 24, 2025
A field-programmable gate array based on wafer-scale 2D semiconductorQicheng Sun, Mingrui Ao, Xiangqi Dong, et al.
Nature|April 2, 2025
A RISC-V 32-bit microprocessor based on two-dimensional semiconductorsMingrui Ao, Xiucheng Zhou, Xinjie Kong, et al.
National Science Review|February 2, 2026
Hybrid-gate MoS<sub>2</sub> 2T0C DRAM for low-power multi-bit storage with high linearityZhejia Zhang, Saifei Gou, Yufei Song, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 20, 2025
Development of Self-Aligned Top-Gate Transistor Arrays on Wafer-Scale Two-Dimensional SemiconductorYuxuan Zhu, Jinshu Zhang, Hui Xie, et al.
Nature Materials|January 14, 2026
Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS<sub>2</sub> transistorsSaifei Gou, Yuxuan Zhu, Zhejia Zhang, et al.
Nature Communications|May 25, 2026
Monolithic integration of p- and n-type doped 2D WSe<sub>2</sub> for wafer-scale complementary logic circuitsYan Hu, Shicheng Zeng, Yi Wang, et al.
Pageof 1