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Nanotechnology
|
April 27, 2013
Crystal phase engineered quantum wells in ZnO nanowires
V Khranovskyy, Alexey M Glushenkov, Y Chen, et al.
Nature Nanotechnology
|
October 30, 2012
Spatially resolved Hall effect measurement in a single semiconductor nanowire
Kristian Storm, Filip Halvardsson, Magnus Heurlin, et al.
Nano Letters
|
January 11, 2007
Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
Evgenii S Moskalenko, Mats Larsson, K Fredrik Karlsson, et al.
Nanotechnology
|
June 25, 2014
Atom probe tomography study of Mg-doped GaN layers
S Khromov, D Gregorius, R Schiller, et al.
Nano Letters
|
November 10, 2005
Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
Evgenii S Moskalenko, Fredrik K Karlsson, Vesselin T Donchev, et al.
ACS Applied Materials & Interfaces
|
March 25, 2020
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
Zhaoxia Bi, Taiping Lu, Jovana Colvin, et al.
Physical Review Letters
|
August 8, 2009
Evidence for two Mg related acceptors in GaN
B Monemar, P P Paskov, G Pozina, et al.
Physical Review Letters
|
March 21, 2008
Resonant light delay in GaN with ballistic and diffusive propagation
T V Shubina, M M Glazov, A A Toropov, et al.
Nano Letters
|
April 3, 2019
InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes
Zhaoxia Bi, Filip Lenrick, Jovana Colvin, et al.
Physical Review Letters
|
April 20, 2004
Mie resonances, infrared emission, and the band gap of InN
T V Shubina, S V Ivanov, V N Jmerik, et al.
Page
of 12
Search research articles
Search
Showing results (111-120 of 120) with videos related to
Sort By:
Page
of 12
You have reached the last page of results.
This site can display upto 120 results.
Nanotechnology
|
April 27, 2013
Crystal phase engineered quantum wells in ZnO nanowires
V Khranovskyy, Alexey M Glushenkov, Y Chen, et al.
Nature Nanotechnology
|
October 30, 2012
Spatially resolved Hall effect measurement in a single semiconductor nanowire
Kristian Storm, Filip Halvardsson, Magnus Heurlin, et al.
Nano Letters
|
January 11, 2007
Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
Evgenii S Moskalenko, Mats Larsson, K Fredrik Karlsson, et al.
Nanotechnology
|
June 25, 2014
Atom probe tomography study of Mg-doped GaN layers
S Khromov, D Gregorius, R Schiller, et al.
Nano Letters
|
November 10, 2005
Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
Evgenii S Moskalenko, Fredrik K Karlsson, Vesselin T Donchev, et al.
ACS Applied Materials & Interfaces
|
March 25, 2020
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
Zhaoxia Bi, Taiping Lu, Jovana Colvin, et al.
Physical Review Letters
|
August 8, 2009
Evidence for two Mg related acceptors in GaN
B Monemar, P P Paskov, G Pozina, et al.
Physical Review Letters
|
March 21, 2008
Resonant light delay in GaN with ballistic and diffusive propagation
T V Shubina, M M Glazov, A A Toropov, et al.
Nano Letters
|
April 3, 2019
InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes
Zhaoxia Bi, Filip Lenrick, Jovana Colvin, et al.
Physical Review Letters
|
April 20, 2004
Mie resonances, infrared emission, and the band gap of InN
T V Shubina, S V Ivanov, V N Jmerik, et al.
Page
of 12