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Montalenti

Showing results (41-50 of 72) with videos related to

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Nanotechnology|September 9, 2016
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterningM Bollani, D Chrastina, R Ruggeri, et al.
Materials (Basel, Switzerland)|October 5, 2019
Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field ApproachMarco Masullo, Roberto Bergamaschini, Marco Albani, et al.
Solid-State Electronics|December 20, 2011
Strained MOSFETs on ordered SiGe dotsJohann Cervenka, Hans Kosina, Siegfried Selberherr, et al.
ACS Applied Materials & Interfaces|September 8, 2016
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si PillarsOliver Skibitzki, Giovanni Capellini, Yuji Yamamoto, et al.
Physical Review Letters|March 5, 2009
Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substratesT U Schülli, G Vastola, M-I Richard, et al.
Physical Review Letters|December 17, 2004
Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)F Montalenti, P Raiteri, D B Migas, et al.
ACS Applied Materials & Interfaces|August 8, 2015
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on SiMarco Salvalaglio, Roberto Bergamaschini, Fabio Isa, et al.
Physical Review Letters|January 15, 2011
Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixingJ J Zhang, F Montalenti, A Rastelli, et al.
The Journal of Chemical Physics|July 2, 2024
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germaniumA Fantasia, F Rovaris, O Abou El Kheir, et al.
ACS Nano|January 24, 2020
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell NanowiresSimone Assali, Roberto Bergamaschini, Emilio Scalise, et al.
Pageof 8

Showing results (41-50 of 72) with videos related to

Sort By:
Pageof 8
Nanotechnology|September 9, 2016
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterningM Bollani, D Chrastina, R Ruggeri, et al.
Materials (Basel, Switzerland)|October 5, 2019
Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field ApproachMarco Masullo, Roberto Bergamaschini, Marco Albani, et al.
Solid-State Electronics|December 20, 2011
Strained MOSFETs on ordered SiGe dotsJohann Cervenka, Hans Kosina, Siegfried Selberherr, et al.
ACS Applied Materials & Interfaces|September 8, 2016
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si PillarsOliver Skibitzki, Giovanni Capellini, Yuji Yamamoto, et al.
Physical Review Letters|March 5, 2009
Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substratesT U Schülli, G Vastola, M-I Richard, et al.
Physical Review Letters|December 17, 2004
Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001)F Montalenti, P Raiteri, D B Migas, et al.
ACS Applied Materials & Interfaces|August 8, 2015
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on SiMarco Salvalaglio, Roberto Bergamaschini, Fabio Isa, et al.
Physical Review Letters|January 15, 2011
Collective shape oscillations of SiGe islands on pit-patterned Si(001) substrates: a coherent-growth strategy enabled by self-regulated intermixingJ J Zhang, F Montalenti, A Rastelli, et al.
The Journal of Chemical Physics|July 2, 2024
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germaniumA Fantasia, F Rovaris, O Abou El Kheir, et al.
ACS Nano|January 24, 2020
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell NanowiresSimone Assali, Roberto Bergamaschini, Emilio Scalise, et al.
Pageof 8