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Scientific Reports
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October 1, 2017
Electron microscopy by specimen design: application to strain measurements
Nikolay Cherkashin, Thibaud Denneulin, Martin J Hÿtch
Nanomaterials (Basel, Switzerland)
|
June 24, 2022
Experimentally-Verified Modeling of InGaAs Quantum Dots
Alexander N Kosarev, Vladimir V Chaldyshev, Nikolay Cherkashin
Ultramicroscopy
|
September 10, 2013
Dynamic scattering theory for dark-field electron holography of 3D strain fields
Axel Lubk, Elsa Javon, Nikolay Cherkashin, et al.
Nanomaterials (Basel, Switzerland)
|
July 2, 2021
Effect of Nitrogen Doping on the Crystallization Kinetics of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Minh Anh Luong, Nikolay Cherkashin, Béatrice Pecassou, et al.
Nanomaterials (Basel, Switzerland)
|
January 21, 2023
Electromechanically Coupled III-N Quantum Dots
Daniele Barettin, Alexei V Sakharov, Andrey F Tsatsulnikov, et al.
Scientific Reports
|
May 5, 2016
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Charles Renard, Timothée Molière, Nikolay Cherkashin, et al.
Nanomaterials (Basel, Switzerland)
|
April 28, 2023
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
Daniele Barettin, Alexei V Sakharov, Andrey F Tsatsulnikov, et al.
Nano Letters
|
March 5, 2014
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Yang Qiu, Fuccio Cristiano, Karim Huet, et al.
Nature Communications
|
November 20, 2024
Switchable topological polar states in epitaxial BaTiO<sub>3</sub> nanoislands on silicon
Ibukun Olaniyan, Iurii Tikhonov, Valentin Väinö Hevelke, et al.
ACS Nano
|
October 23, 2025
Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO<sub>3</sub> Films on Silicon
Ibukun Olaniyan, Alfredo Blázquez Martínez, Valentin Väinö Hevelke, et al.
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Search research articles
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Showing results (1-10 of 12) with videos related to
Sort By:
Page
of 2
Scientific Reports
|
October 1, 2017
Electron microscopy by specimen design: application to strain measurements
Nikolay Cherkashin, Thibaud Denneulin, Martin J Hÿtch
Nanomaterials (Basel, Switzerland)
|
June 24, 2022
Experimentally-Verified Modeling of InGaAs Quantum Dots
Alexander N Kosarev, Vladimir V Chaldyshev, Nikolay Cherkashin
Ultramicroscopy
|
September 10, 2013
Dynamic scattering theory for dark-field electron holography of 3D strain fields
Axel Lubk, Elsa Javon, Nikolay Cherkashin, et al.
Nanomaterials (Basel, Switzerland)
|
July 2, 2021
Effect of Nitrogen Doping on the Crystallization Kinetics of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
Minh Anh Luong, Nikolay Cherkashin, Béatrice Pecassou, et al.
Nanomaterials (Basel, Switzerland)
|
January 21, 2023
Electromechanically Coupled III-N Quantum Dots
Daniele Barettin, Alexei V Sakharov, Andrey F Tsatsulnikov, et al.
Scientific Reports
|
May 5, 2016
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Charles Renard, Timothée Molière, Nikolay Cherkashin, et al.
Nanomaterials (Basel, Switzerland)
|
April 28, 2023
Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
Daniele Barettin, Alexei V Sakharov, Andrey F Tsatsulnikov, et al.
Nano Letters
|
March 5, 2014
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Yang Qiu, Fuccio Cristiano, Karim Huet, et al.
Nature Communications
|
November 20, 2024
Switchable topological polar states in epitaxial BaTiO<sub>3</sub> nanoislands on silicon
Ibukun Olaniyan, Iurii Tikhonov, Valentin Väinö Hevelke, et al.
ACS Nano
|
October 23, 2025
Optically Induced Irreversible Ferroelastic and Ferroelectric Switching in Epitaxial BaTiO<sub>3</sub> Films on Silicon
Ibukun Olaniyan, Alfredo Blázquez Martínez, Valentin Väinö Hevelke, et al.
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of 2