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Extended defects formation in nanosecond laser-annealed ion implanted silicon
Yang Qiu1, Fuccio Cristiano, Karim Huet
1LAAS, CNRS and Université de Toulouse , 7 av. Du Col. Roche, 31400 Toulouse, France.
Nano Letters
|March 5, 2014
Summary
Nanosecond laser annealing of ion-implanted silicon reveals unique dislocation loop defects. Compressive stress during annealing may alter defect formation energy, deviating from typical ion-implanted silicon defect structures.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Ion implantation is crucial for semiconductor device fabrication.
- Understanding defect evolution during annealing is vital for controlling material properties.
- Laser thermal annealing offers precise control over thermal profiles.
Purpose of the Study:
- To investigate damage evolution and dopant distribution in ion-implanted silicon during nanosecond laser thermal annealing.
- To analyze defect structures formed at different melting front positions (nonmelt, partial melt, full melt).
- To elucidate the influence of laser annealing conditions on defect stability and formation.
Main Methods:
- Transmission Electron Microscopy (TEM) for defect imaging.
- Secondary Ion Mass Spectrometry (SIMS) for dopant profiling.
- Atom Probe Tomography (APT) for 3D dopant and defect analysis.
Main Results:
- Observed dislocation loops with (001) orientation and [001] Burgers vector, differing from conventional {111} loops or {311} defects.
- Defect stability was found to be influenced by the melting regime during laser annealing.
- Boron and silicon implanted silicon samples exhibited similar defect behavior.
Conclusions:
- Laser annealing can induce non-conventional defect structures in ion-implanted silicon.
- Compressive stress in nonmelted regions during laser annealing may modify defect formation energy.
- These findings offer insights into advanced semiconductor processing and defect engineering.
