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Ojun Kwon

Showing results (1-10 of 12) with videos related to

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Nanotechnology|February 9, 2022
In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracyOjun Kwon, Seyoung Oh, Heejeong Park, et al.
Nanotechnology|February 11, 2022
In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracyOjun Kwon, Seyoung Oh, Heejeong Park, et al.
Nanotechnology|May 22, 2026
Enhanced electrical performance of tellurium FETs via ultra-thin atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub>interlayer for fermi-level de-pinningYeongeun Kwon, Seyoung Oh, Ojun Kwon, et al.
Nano Letters|July 30, 2021
Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap LevelMoonsang Lee, Seunghyun Nam, Byungjin Cho, et al.
Nanotechnology|December 13, 2023
Reliable synaptic plasticity of InGaZnO transistor with TiO<sub>2</sub>interlayerSoo-Hong Jeong, Seyoung Oh, Ojun Kwon, et al.
ACS Applied Materials & Interfaces|November 11, 2022
Highly Reproducible Heterosynaptic Plasticity Enabled by MoS<sub>2</sub>/ZrO<sub>2-</sub> Heterostructure MemtransistorHye Yeon Jang, Ojun Kwon, Jae Hyeon Nam, et al.
ACS Applied Materials & Interfaces|April 1, 2026
Highly Reliable and Uniform Synaptic Transistors Enabled by a Polymer-Engineered Semiconducting Nanotube NetworkYujung Kim, Jaemin Shin, Seyoung Oh, et al.
ACS Applied Materials & Interfaces|March 16, 2026
Highly Stable Chip-Scale Tellurium Memtransistor Based on Field-Induced Oxygen Vacancy MigrationEunjeong Cho, Seyoung Oh, Ojun Kwon, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 12, 2024
Photo-Assisted Ferroelectric Domain Control for α-In<sub>2</sub>Se<sub>3</sub> Artificial Synapses Inspired by Spontaneous Internal Electric FieldsSeok-Ju Kang, Wonzee Jung, Oh Hun Gwon, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 3, 2025
Chip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec<sup>-1</sup> Super-Steep Subthreshold SwingSeyoung Oh, Ojun Kwon, Jongwon Yoon, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Nanotechnology|February 9, 2022
In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracyOjun Kwon, Seyoung Oh, Heejeong Park, et al.
Nanotechnology|February 11, 2022
In-depth analysis on electrical parameters of floating gate IGZO synaptic transistor affecting pattern recognition accuracyOjun Kwon, Seyoung Oh, Heejeong Park, et al.
Nanotechnology|May 22, 2026
Enhanced electrical performance of tellurium FETs via ultra-thin atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub>interlayer for fermi-level de-pinningYeongeun Kwon, Seyoung Oh, Ojun Kwon, et al.
Nano Letters|July 30, 2021
Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap LevelMoonsang Lee, Seunghyun Nam, Byungjin Cho, et al.
Nanotechnology|December 13, 2023
Reliable synaptic plasticity of InGaZnO transistor with TiO<sub>2</sub>interlayerSoo-Hong Jeong, Seyoung Oh, Ojun Kwon, et al.
ACS Applied Materials & Interfaces|November 11, 2022
Highly Reproducible Heterosynaptic Plasticity Enabled by MoS<sub>2</sub>/ZrO<sub>2-</sub> Heterostructure MemtransistorHye Yeon Jang, Ojun Kwon, Jae Hyeon Nam, et al.
ACS Applied Materials & Interfaces|April 1, 2026
Highly Reliable and Uniform Synaptic Transistors Enabled by a Polymer-Engineered Semiconducting Nanotube NetworkYujung Kim, Jaemin Shin, Seyoung Oh, et al.
ACS Applied Materials & Interfaces|March 16, 2026
Highly Stable Chip-Scale Tellurium Memtransistor Based on Field-Induced Oxygen Vacancy MigrationEunjeong Cho, Seyoung Oh, Ojun Kwon, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 12, 2024
Photo-Assisted Ferroelectric Domain Control for α-In<sub>2</sub>Se<sub>3</sub> Artificial Synapses Inspired by Spontaneous Internal Electric FieldsSeok-Ju Kang, Wonzee Jung, Oh Hun Gwon, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 3, 2025
Chip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec<sup>-1</sup> Super-Steep Subthreshold SwingSeyoung Oh, Ojun Kwon, Jongwon Yoon, et al.
Pageof 2