Reliable synaptic plasticity of InGaZnO transistor with TiO₂interlayer

Area of Science:

• Materials Science
• Neuroscience
• Computer Engineering

Background:

• Synaptic transistors are key components for neuromorphic computing, mimicking biological synapses.
• Efficient synaptic devices require tunable plasticity and large memory windows.

Purpose of the Study:

• To develop an Indium Gallium Zinc Oxide (IGZO)-based synaptic transistor utilizing a Titanium Dioxide (TiO2) buffer layer.
• To investigate the synaptic plasticity and pattern recognition capabilities of the fabricated device.

Main Methods:

• Fabrication of a Ti/TiO2/IGZO synaptic transistor structure.
• Characterization of synaptic functionalities including excitatory post-synaptic current and paired-pulse facilitation.
• Modeling of pattern recognition using Modified National Institute of Standards and Technology handwritten digits via CrossSim simulation.

Main Results:

• The Ti/TiO2/IGZO structure exhibited a significant hysteresis window, essential for synaptic function.
• Demonstrated reliable synaptic plasticity: potentiation, depression, excitatory post-synaptic current, and paired-pulse facilitation.
• Achieved approximately 89% accuracy in handwritten digit recognition through simulation.

Conclusions:

• The TiO2 buffer layer effectively enables synaptic plasticity in IGZO-based transistors.
• This approach offers a simple yet effective method for creating high-performance synaptic devices.
• The developed synaptic transistor shows promise for implementation in neuromorphic computing systems.