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Nano Letters|January 21, 2017
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device DesignOlof Hultin, Gaute Otnes, Lars Samuelson, et al.Nano Letters|January 3, 2014
Synthesis of doped InP core-shell nanowires evaluated using hall effect measurementsMagnus Heurlin, Olof Hultin, Kristian Storm, et al.Nano Letters|November 25, 2015
Comparing Hall Effect and Field Effect Measurements on the Same Single NanowireOlof Hultin, Gaute Otnes, Magnus T Borgström, et al.Nanotechnology|January 7, 2015
Study of carrier concentration in single InP nanowires by luminescence and Hall measurementsDavid Lindgren, Olof Hultin, Magnus Heurlin, et al.Nanotechnology|March 30, 2018
Electrical and optical evaluation of n-type doping in In x Ga(1-x)P nanowiresXulu Zeng, Renato T Mourão, Gaute Otnes, et al.Nanoscale|December 14, 2019
Template-assisted vapour-liquid-solid growth of InP nanowires on (001) InP and Si substratesReza Jafari Jam, Axel R Persson, Enrique Barrigón, et al.Small (Weinheim an Der Bergstrasse, Germany)|June 25, 2020
Dislocation-Free and Atomically Flat GaN Hexagonal Microprisms for Device ApplicationsMaryam Khalilian, Zhaoxia Bi, Jonas Johansson, et al.Nano Letters|April 3, 2019
InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting DiodesZhaoxia Bi, Filip Lenrick, Jovana Colvin, et al.Pageof 1