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ACS Nano|June 12, 2023
Controlled Switching of Bistable Nanophase Domains on a Silicon SurfaceFangfei Ming, Paul C Snijders, Hanno H Weitering
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces|August 6, 2021
Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in SiliconAlexander Markevich, Bethany M Hudak, Jacob Madsen, et al.
Nanoscale|August 28, 2013
A persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite filmPaul C Snijders, Min Gao, Hangwen Guo, et al.
Nanoscale|December 7, 2017
Homo-endotaxial one-dimensional Si nanostructuresJiaming Song, Bethany M Hudak, Hunter Sims, et al.
Scientific Reports|September 3, 2014
Resolving transitions in the mesoscale domain configuration in VO2 using laser speckle pattern analysisKatyayani Seal, Amos Sharoni, Jamie M Messman, et al.
ACS Nano|May 12, 2018
Directed Atom-by-Atom Assembly of Dopants in SiliconBethany M Hudak, Jiaming Song, Hunter Sims, et al.
Scientific Reports|July 23, 2016
Dynamic defect correlations dominate activated electronic transport in SrTiO3Paul C Snijders, Cengiz Şen, Michael P McConnell, et al.
Physical Review Letters|January 13, 2018
Realization of a Hole-Doped Mott Insulator on a Triangular Silicon LatticeFangfei Ming, Steve Johnston, Daniel Mulugeta, et al.
Nature Communications|March 8, 2017
Hidden phase in a two-dimensional Sn layer stabilized by modulation hole dopingFangfei Ming, Daniel Mulugeta, Weisong Tu, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 31, 2017
Kinetically Controlled Fabrication of Single-Crystalline TiO<sub>2</sub> Nanobrush Architectures with High Energy {001} FacetsLisha Fan, Xiang Gao, Dongkyu Lee, et al.
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