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Materials (Basel, Switzerland)|February 15, 2022
Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic BufferPaweł Wyborski, Paweł Podemski, Piotr Andrzej Wroński, et al.Materials (Basel, Switzerland)|September 28, 2021
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs SubstratePiotr Andrzej Wroński, Paweł Wyborski, Anna Musiał, et al.Materials (Basel, Switzerland)|February 10, 2021
InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication WindowPaweł Wyborski, Anna Musiał, Paweł Mrowiński, et al.Optics Express|November 23, 2021
Spin memory effect in charged single telecom quantum dotsPaweł Podemski, Michał Gawełczyk, Paweł Wyborski, et al.Optics Express|November 23, 2021
Spin memory effect in charged single telecom quantum dots: erratumPaweł Podemski, Michał Gawełczyk, Paweł Wyborski, et al.ACS Applied Materials & Interfaces|September 13, 2024
Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon SubstratesWojciech Rudno-Rudziński, Michał Gawełczyk, Paweł Podemski, et al.Pageof 1