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Pradipta K Nayak

Showing results (1-10 of 9) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|July 5, 2016
Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer DepositionPradipta K Nayak, Zhenwei Wang, Husam N Alshareef
ACS Applied Materials & Interfaces|August 25, 2016
Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate DielectricsFwzah H Alshammari, Pradipta K Nayak, Zhenwei Wang, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|May 27, 2009
Effect of cadmium arachidate layers on the growth of pentacene and the performance of pentacene-based thin film transistorsPradipta K Nayak, Jinwoo Kim, Junhee Cho, et al.
ACS Applied Materials & Interfaces|April 3, 2013
Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistorsPradipta K Nayak, Mohamed N Hedhili, Dongkyu Cha, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 17, 2016
Recent Developments in p-Type Oxide Semiconductor Materials and DevicesZhenwei Wang, Pradipta K Nayak, Jesus A Caraveo-Frescas, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Solution-processable zinc oxide for the polymer solar cell based on P3HT:PCBMJun Young Kim, Seunguk Noh, Donggu Lee, et al.
Scientific Reports|April 15, 2014
Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layerPradipta K Nayak, J A Caraveo-Frescas, Zhenwei Wang, et al.
ACS Nano|May 15, 2013
Record mobility in transparent p-type tin monoxide films and devices by phase engineeringJesus A Caraveo-Frescas, Pradipta K Nayak, Hala A Al-Jawhari, et al.
Scientific Reports|April 21, 2015
Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layerZhenwei Wang, Hala A Al-Jawhari, Pradipta K Nayak, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Advanced Materials (Deerfield Beach, Fla.)|July 5, 2016
Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer DepositionPradipta K Nayak, Zhenwei Wang, Husam N Alshareef
ACS Applied Materials & Interfaces|August 25, 2016
Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate DielectricsFwzah H Alshammari, Pradipta K Nayak, Zhenwei Wang, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|May 27, 2009
Effect of cadmium arachidate layers on the growth of pentacene and the performance of pentacene-based thin film transistorsPradipta K Nayak, Jinwoo Kim, Junhee Cho, et al.
ACS Applied Materials & Interfaces|April 3, 2013
Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistorsPradipta K Nayak, Mohamed N Hedhili, Dongkyu Cha, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 17, 2016
Recent Developments in p-Type Oxide Semiconductor Materials and DevicesZhenwei Wang, Pradipta K Nayak, Jesus A Caraveo-Frescas, et al.
Journal of Nanoscience and Nanotechnology|November 30, 2011
Solution-processable zinc oxide for the polymer solar cell based on P3HT:PCBMJun Young Kim, Seunguk Noh, Donggu Lee, et al.
Scientific Reports|April 15, 2014
Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layerPradipta K Nayak, J A Caraveo-Frescas, Zhenwei Wang, et al.
ACS Nano|May 15, 2013
Record mobility in transparent p-type tin monoxide films and devices by phase engineeringJesus A Caraveo-Frescas, Pradipta K Nayak, Hala A Al-Jawhari, et al.
Scientific Reports|April 21, 2015
Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layerZhenwei Wang, Hala A Al-Jawhari, Pradipta K Nayak, et al.
Pageof 1