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Nanotechnology|May 17, 2017
Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2Prathamesh Dhakras, Pratik Agnihotri, Ji Ung LeeNano Letters|June 24, 2016
Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent GainsPratik Agnihotri, Prathamesh Dhakras, Ji Ung LeeNano Letters|June 18, 2019
Direct Measurement of the Electron Beam Spatial Intensity Profile via Carbon Nanotube TomographyMatthew D Zotta, Sharadh Jois, Prathamesh Dhakras, et al.Advanced Materials (Deerfield Beach, Fla.)|April 24, 2019
Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott LimitSamuel W LaGasse, Prathamesh Dhakras, Kenji Watanabe, et al.Scientific Reports|January 26, 2019
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale TransistorsJi Ung Lee, Ramya Cuduvally, Prathamesh Dhakras, et al.Pageof 1