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Materials (Basel, Switzerland)|July 14, 2023
Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In<sub>0.8</sub>Ga<sub>0.2</sub>As PhotodetectorsPeng Cao, Tiancai Wang, Hongling Peng, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 20, 2023
Research Process on Photodetectors based on Group-10 Transition Metal DichalcogenidesWaqas Ahmad, Jiang Wu, Qiandong Zhuang, et al.
Physical Chemistry Chemical Physics : PCCP|August 18, 2016
Quantum phase transitions in Sn bilayer based interfacial systems by an external strainLi Chen, Qiandong Zhuang, Yeqing Chen, et al.
Food Chemistry|October 14, 2022
An electrochemiluminescence biosensor based on Graphitic carbon nitride luminescence quenching for detection of AFB<sub>1</sub>Dongyan Tian, Jie Wang, Qiandong Zhuang, et al.
Sensors (Basel, Switzerland)|January 26, 2024
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication ProcessTiancai Wang, Hongling Peng, Peng Cao, et al.
Nanoscale|January 30, 2015
A tunable submicro-optofluidic polymer filter based on guided-mode resonanceGuohui Xiao, Qiangzhong Zhu, Yang Shen, et al.
Nano Letters|February 24, 2017
Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs NanowiresXiren Chen, Qiandong Zhuang, H Alradhi, et al.
Sensors (Basel, Switzerland)|February 27, 2026
Recent Progress in Silicon-Based On-Chip Integrated Infrared PhotodetectorsYu He, Hongling Peng, Peng Cao, et al.
Scientific Reports|March 13, 2019
Topological edge states in high-temperature superconductiving FeSe/SrTiO<sub>3</sub> films with Te substitutionLi Chen, Hongmei Liu, Chuan Jiang, et al.
Optics Letters|May 23, 2023
Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires: publisher's noteXiren Chen, H Alradhi, Zh M Jin, et al.
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