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Iscience|March 14, 2022
Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorusXiong Xiong, Xin Wang, Qianlan Hu, et al.Science Advances|December 23, 2022
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stressQianlan Hu, Shenwu Zhu, Chengru Gu, et al.Nanoscale|March 5, 2019
Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructuresTiaoyang Li, Xuefei Li, Mengchuan Tian, et al.ACS Applied Materials & Interfaces|March 20, 2020
Tunable 1/<i>f</i> Noise in CVD Bernal-Stacked Bilayer Graphene TransistorsMengchuan Tian, Qianlan Hu, Chengru Gu, et al.Nature Materials|August 14, 2019
Nanometre-thin indium tin oxide for advanced high-performance electronicsShengman Li, Mengchuan Tian, Qingguo Gao, et al.ACS Applied Materials & Interfaces|June 1, 2018
High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High FrequenciesMengchuan Tian, Xuefei Li, Tiaoyang Li, et al.Advanced Materials (Deerfield Beach, Fla.)|March 9, 2023
True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZOQianlan Hu, Chengru Gu, Qijun Li, et al.Pageof 1