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R J H Morris

Showing results (1-10 of 4) with videos related to

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Journal of the American Society for Mass Spectrometry|July 23, 2016
Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy SequencingR J H Morris, T P A Hase, A M Sanchez, et al.
Rapid Communications in Mass Spectrometry : RCM|June 17, 2010
Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancementR J H Morris, M G Dowsett, R Beanland, et al.
Ultramicroscopy|December 15, 2017
Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structuresD Melkonyan, C Fleischmann, A Veloso, et al.
Physical Review Letters|February 2, 2013
Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopantsW M Linhart, J Chai, R J H Morris, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Journal of the American Society for Mass Spectrometry|July 23, 2016
Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy SequencingR J H Morris, T P A Hase, A M Sanchez, et al.
Rapid Communications in Mass Spectrometry : RCM|June 17, 2010
Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancementR J H Morris, M G Dowsett, R Beanland, et al.
Ultramicroscopy|December 15, 2017
Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structuresD Melkonyan, C Fleischmann, A Veloso, et al.
Physical Review Letters|February 2, 2013
Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopantsW M Linhart, J Chai, R J H Morris, et al.
Pageof 1