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Science (New York, N.Y.)|December 9, 2021
Keep it simple and switch to pure telluriumRaffaella Calarco, Fabrizio Arciprete
Scientific Reports|March 21, 2018
Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloysEugenio Zallo, Stefano Cecchi, Jos E Boschker, et al.
Scientific Reports|May 5, 2017
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloysEugenio Zallo, Stefano Cecchi, Jos E Boschker, et al.
Nanotechnology|January 5, 2017
Chemical and structural arrangement of the trigonal phase in GeSbTe thin filmsAntonio M Mio, Stefania M S Privitera, Valeria Bragaglia, et al.
Nanomaterials (Basel, Switzerland)|June 24, 2022
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible PolyimideMarco Bertelli, Adriano Díaz Fattorini, Sara De Simone, et al.
Scientific Reports|July 8, 2024
Stable chalcogenide Ge-Sb-Te heterostructures with minimal Ge segregationMarco Bertelli, Gianfranco Sfuncia, Sara De Simone, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|November 21, 2023
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m (Sb2 Te3 )n LamellaeStefano Cecchi, Jamo Momand, Daniele Dragoni, et al.
ACS Applied Electronic Materials|November 3, 2025
Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) nFlavia Righi Riva, Stefano Cecchi, Simone Prili, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2022
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te AlloysCaroline Chèze, Flavia Righi Riva, Giulia Di Bella, et al.
Scientific Reports|April 2, 2016
Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change MaterialsValeria Bragaglia, Fabrizio Arciprete, Wei Zhang, et al.
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