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Raffaella Calarco

Showing results (1-10 of 32) with videos related to

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Science (New York, N.Y.)|December 9, 2021
Keep it simple and switch to pure telluriumRaffaella Calarco, Fabrizio Arciprete
Nano Letters|July 13, 2006
Photoluminescence and intrinsic properties of MBE-grown InN nanowiresToma Stoica, Ralph J Meijers, Raffaella Calarco, et al.
Scientific Reports|April 14, 2018
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb<sub>2</sub>Te<sub>3</sub> alloysJos E Boschker, Xiang Lü, Valeria Bragaglia, et al.
Nano Letters|August 21, 2008
Flux quantization effects in InN nanowiresThomas Richter, Christian Blömers, Hans Lüth, et al.
Nano Letters|July 3, 2007
Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxyRaffaella Calarco, Ralph J Meijers, Ratan K Debnath, et al.
Nanoscale|November 3, 2015
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nanoscale|June 17, 2017
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb<sub>2</sub>Te<sub>3</sub> based superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nano Letters|November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polaritySergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nano Letters|July 13, 2006
Defect distribution along single GaN nanowhiskersAnna Cavallini, Laura Polenta, Marco Rossi, et al.
Scientific Reports|March 21, 2018
Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloysEugenio Zallo, Stefano Cecchi, Jos E Boschker, et al.
Pageof 4

Showing results (1-10 of 32) with videos related to

Sort By:
Pageof 4
Science (New York, N.Y.)|December 9, 2021
Keep it simple and switch to pure telluriumRaffaella Calarco, Fabrizio Arciprete
Nano Letters|July 13, 2006
Photoluminescence and intrinsic properties of MBE-grown InN nanowiresToma Stoica, Ralph J Meijers, Raffaella Calarco, et al.
Scientific Reports|April 14, 2018
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb<sub>2</sub>Te<sub>3</sub> alloysJos E Boschker, Xiang Lü, Valeria Bragaglia, et al.
Nano Letters|August 21, 2008
Flux quantization effects in InN nanowiresThomas Richter, Christian Blömers, Hans Lüth, et al.
Nano Letters|July 3, 2007
Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxyRaffaella Calarco, Ralph J Meijers, Ratan K Debnath, et al.
Nanoscale|November 3, 2015
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nanoscale|June 17, 2017
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb<sub>2</sub>Te<sub>3</sub> based superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nano Letters|November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polaritySergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nano Letters|July 13, 2006
Defect distribution along single GaN nanowhiskersAnna Cavallini, Laura Polenta, Marco Rossi, et al.
Scientific Reports|March 21, 2018
Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloysEugenio Zallo, Stefano Cecchi, Jos E Boschker, et al.
Pageof 4