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Rainer Waser

Showing results (1-10 of 102) with videos related to

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Journal of Nanoscience and Nanotechnology|February 21, 2013
Redox-based resistive switching memoriesRainer Waser
Nanoscale|September 26, 2013
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cellsStephan Menzel, Rainer Waser
Nature Materials|February 3, 2004
Pushing towards the digital storage limitRainer Waser, Andreas Rüdiger
Nature Materials|November 2, 2007
Nanoionics-based resistive switching memoriesRainer Waser, Masakazu Aono
Advanced Materials (Deerfield Beach, Fla.)|October 23, 2012
Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAMIlia Valov, Rainer Waser
Beilstein Journal of Nanotechnology|July 23, 2015
Enhanced fullerene-Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactionsMichael Paßens, Rainer Waser, Silvia Karthäuser
Physical Chemistry Chemical Physics : PCCP|April 7, 2020
Defect chemistry of donor-doped BaTiO<sub>3</sub> with BaO-excess for reduction resistant PTCR thermistor applications - redox-behaviourChristian Pithan, Hayato Katsu, Rainer Waser
Nanoscale|July 8, 2015
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulationsStephan Menzel, Philip Kaupmann, Rainer Waser
Physical Chemistry Chemical Physics : PCCP|July 10, 2009
Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cellsChristina Schindler, Ilia Valov, Rainer Waser
Nanotechnology|October 24, 2017
Improvement of SET variability in TaO <sub>x</sub> based resistive RAM devicesAlexander Schönhals, Rainer Waser, Dirk J Wouters
Pageof 11

Showing results (1-10 of 102) with videos related to

Sort By:
Pageof 11
Journal of Nanoscience and Nanotechnology|February 21, 2013
Redox-based resistive switching memoriesRainer Waser
Nanoscale|September 26, 2013
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cellsStephan Menzel, Rainer Waser
Nature Materials|February 3, 2004
Pushing towards the digital storage limitRainer Waser, Andreas Rüdiger
Nature Materials|November 2, 2007
Nanoionics-based resistive switching memoriesRainer Waser, Masakazu Aono
Advanced Materials (Deerfield Beach, Fla.)|October 23, 2012
Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAMIlia Valov, Rainer Waser
Beilstein Journal of Nanotechnology|July 23, 2015
Enhanced fullerene-Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactionsMichael Paßens, Rainer Waser, Silvia Karthäuser
Physical Chemistry Chemical Physics : PCCP|April 7, 2020
Defect chemistry of donor-doped BaTiO<sub>3</sub> with BaO-excess for reduction resistant PTCR thermistor applications - redox-behaviourChristian Pithan, Hayato Katsu, Rainer Waser
Nanoscale|July 8, 2015
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulationsStephan Menzel, Philip Kaupmann, Rainer Waser
Physical Chemistry Chemical Physics : PCCP|July 10, 2009
Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cellsChristina Schindler, Ilia Valov, Rainer Waser
Nanotechnology|October 24, 2017
Improvement of SET variability in TaO <sub>x</sub> based resistive RAM devicesAlexander Schönhals, Rainer Waser, Dirk J Wouters
Pageof 11