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Journal of Nanoscience and Nanotechnology
|
February 21, 2013
Redox-based resistive switching memories
Rainer Waser
Nanoscale
|
September 26, 2013
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
Stephan Menzel, Rainer Waser
Nature Materials
|
February 3, 2004
Pushing towards the digital storage limit
Rainer Waser, Andreas Rüdiger
Nature Materials
|
November 2, 2007
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono
Advanced Materials (Deerfield Beach, Fla.)
|
October 23, 2012
Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM
Ilia Valov, Rainer Waser
Beilstein Journal of Nanotechnology
|
July 23, 2015
Enhanced fullerene-Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions
Michael Paßens, Rainer Waser, Silvia Karthäuser
Physical Chemistry Chemical Physics : PCCP
|
April 7, 2020
Defect chemistry of donor-doped BaTiO<sub>3</sub> with BaO-excess for reduction resistant PTCR thermistor applications - redox-behaviour
Christian Pithan, Hayato Katsu, Rainer Waser
Nanoscale
|
July 8, 2015
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Stephan Menzel, Philip Kaupmann, Rainer Waser
Physical Chemistry Chemical Physics : PCCP
|
July 10, 2009
Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
Christina Schindler, Ilia Valov, Rainer Waser
Nanotechnology
|
October 24, 2017
Improvement of SET variability in TaO <sub>x</sub> based resistive RAM devices
Alexander Schönhals, Rainer Waser, Dirk J Wouters
Page
of 11
Search research articles
Search
Showing results (1-10 of 102) with videos related to
Sort By:
Page
of 11
Journal of Nanoscience and Nanotechnology
|
February 21, 2013
Redox-based resistive switching memories
Rainer Waser
Nanoscale
|
September 26, 2013
Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
Stephan Menzel, Rainer Waser
Nature Materials
|
February 3, 2004
Pushing towards the digital storage limit
Rainer Waser, Andreas Rüdiger
Nature Materials
|
November 2, 2007
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono
Advanced Materials (Deerfield Beach, Fla.)
|
October 23, 2012
Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM
Ilia Valov, Rainer Waser
Beilstein Journal of Nanotechnology
|
July 23, 2015
Enhanced fullerene-Au(111) coupling in (2√3 × 2√3)R30° superstructures with intermolecular interactions
Michael Paßens, Rainer Waser, Silvia Karthäuser
Physical Chemistry Chemical Physics : PCCP
|
April 7, 2020
Defect chemistry of donor-doped BaTiO<sub>3</sub> with BaO-excess for reduction resistant PTCR thermistor applications - redox-behaviour
Christian Pithan, Hayato Katsu, Rainer Waser
Nanoscale
|
July 8, 2015
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Stephan Menzel, Philip Kaupmann, Rainer Waser
Physical Chemistry Chemical Physics : PCCP
|
July 10, 2009
Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
Christina Schindler, Ilia Valov, Rainer Waser
Nanotechnology
|
October 24, 2017
Improvement of SET variability in TaO <sub>x</sub> based resistive RAM devices
Alexander Schönhals, Rainer Waser, Dirk J Wouters
Page
of 11