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Rainer Waser

Showing results (21-30 of 102) with videos related to

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Nanotechnology|March 15, 2012
Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithographyMarcel Manheller, Stefan Trellenkamp, Rainer Waser, et al.
Nanoscale|January 29, 2013
Bond nature of active metal ions in SiO2-based electrochemical metallization memory cellsDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
The Journal of Physical Chemistry. B|July 21, 2006
Rectangular (3 x 2 square root of 3) superlattice of a dodecanethiol self-assembled monolayer on Au(111) observed by ultra-high-vacuum scanning tunneling microscopyLars Müller-Meskamp, Björn Lüssem, Silvia Karthäuser, et al.
Scientific Reports|February 5, 2013
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memoriesDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
Nanotechnology|May 17, 2011
Electrochemical metallization memories--fundamentals, applications, prospectsIlia Valov, Rainer Waser, John R Jameson, et al.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|December 26, 2006
Sample-tip interaction of piezoresponse force microscopy in ferroelectric nanostructuresFrank Peter, Andreas Rüdiger, Krzysztof Szot, et al.
Small (Weinheim an Der Bergstrasse, Germany)|December 29, 2006
Variable size and shape distribution of ferroelectric nanoislands by chemical mechanical polishingSven Clemens, Serge Röhrig, Andreas Rüdiger, et al.
Scientific Reports|January 10, 2018
Multi-valued and Fuzzy Logic Realization using TaOx Memristive DevicesDebjyoti Bhattacharjee, Wonjoo Kim, Anupam Chattopadhyay, et al.
ACS Applied Materials & Interfaces|November 22, 2021
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive DevicesNils Kopperberg, Stefan Wiefels, Sergej Liberda, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|July 14, 2011
Dihydroxy(4-thiomorpholinomethyl)benzoic acid: from molecular asymmetry to diode characteristicsM Christina Lennartz, Miriam Baumert, Silvia Karthäuser, et al.
Pageof 11

Showing results (21-30 of 102) with videos related to

Sort By:
Pageof 11
Nanotechnology|March 15, 2012
Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithographyMarcel Manheller, Stefan Trellenkamp, Rainer Waser, et al.
Nanoscale|January 29, 2013
Bond nature of active metal ions in SiO2-based electrochemical metallization memory cellsDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
The Journal of Physical Chemistry. B|July 21, 2006
Rectangular (3 x 2 square root of 3) superlattice of a dodecanethiol self-assembled monolayer on Au(111) observed by ultra-high-vacuum scanning tunneling microscopyLars Müller-Meskamp, Björn Lüssem, Silvia Karthäuser, et al.
Scientific Reports|February 5, 2013
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memoriesDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
Nanotechnology|May 17, 2011
Electrochemical metallization memories--fundamentals, applications, prospectsIlia Valov, Rainer Waser, John R Jameson, et al.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|December 26, 2006
Sample-tip interaction of piezoresponse force microscopy in ferroelectric nanostructuresFrank Peter, Andreas Rüdiger, Krzysztof Szot, et al.
Small (Weinheim an Der Bergstrasse, Germany)|December 29, 2006
Variable size and shape distribution of ferroelectric nanoislands by chemical mechanical polishingSven Clemens, Serge Röhrig, Andreas Rüdiger, et al.
Scientific Reports|January 10, 2018
Multi-valued and Fuzzy Logic Realization using TaOx Memristive DevicesDebjyoti Bhattacharjee, Wonjoo Kim, Anupam Chattopadhyay, et al.
ACS Applied Materials & Interfaces|November 22, 2021
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive DevicesNils Kopperberg, Stefan Wiefels, Sergej Liberda, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|July 14, 2011
Dihydroxy(4-thiomorpholinomethyl)benzoic acid: from molecular asymmetry to diode characteristicsM Christina Lennartz, Miriam Baumert, Silvia Karthäuser, et al.
Pageof 11