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Rainer Waser

Showing results (51-60 of 102) with videos related to

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Scientific Reports|October 3, 2020
Picosecond multilevel resistive switching in tantalum oxide thin filmsUlrich Böttger, Moritz von Witzleben, Viktor Havel, et al.
Frontiers in Neuroscience|June 24, 2021
Utilizing the Switching Stochasticity of HfO<sub>2</sub>/TiO<sub>x</sub>-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy PatternsChristopher Bengel, Felix Cüppers, Melika Payvand, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 7, 2009
Field-emission resonances at tip/alpha,omega-mercaptoalkyl ferrocene/Au interfaces studied by STMLars Müller-Meskamp, Silvia Karthäuser, Harold J W Zandvliet, et al.
Frontiers in Neuroscience|September 5, 2022
A high throughput generative vector autoregression model for stochastic synapsesTyler Hennen, Alexander Elias, Jean-François Nodin, et al.
Physical Chemistry Chemical Physics : PCCP|October 18, 2011
Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO3Christian Lenser, Aleksandr Kalinko, Alexei Kuzmin, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2018
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte NanodotsAlpana Nayak, Satomi Unayama, Seishiro Tai, et al.
Nanoscale Horizons|March 21, 2024
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devicesPascal Stasner, Nils Kopperberg, Kristoffer Schnieders, et al.
Scientific Reports|May 6, 2025
Origin of the inhomogeneous nanoscale resistivity in chromium doped V<sub>2</sub>O<sub>3</sub>Johannes Mohr, Yudi Wang, Xiaoyu Xu, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 7, 2017
Electrochemical Tantalum Oxide for Resistive Switching MemoriesAndrea Zaffora, Deok-Yong Cho, Kug-Seung Lee, et al.
Chemical Communications (Cambridge, England)|July 21, 2004
Mononuclear precursor for MOCVD of HfO2 thin filmsArne Baunemann, Reji Thomas, Ralf Becker, et al.
Pageof 11

Showing results (51-60 of 102) with videos related to

Sort By:
Pageof 11
Scientific Reports|October 3, 2020
Picosecond multilevel resistive switching in tantalum oxide thin filmsUlrich Böttger, Moritz von Witzleben, Viktor Havel, et al.
Frontiers in Neuroscience|June 24, 2021
Utilizing the Switching Stochasticity of HfO<sub>2</sub>/TiO<sub>x</sub>-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy PatternsChristopher Bengel, Felix Cüppers, Melika Payvand, et al.
Small (Weinheim an Der Bergstrasse, Germany)|February 7, 2009
Field-emission resonances at tip/alpha,omega-mercaptoalkyl ferrocene/Au interfaces studied by STMLars Müller-Meskamp, Silvia Karthäuser, Harold J W Zandvliet, et al.
Frontiers in Neuroscience|September 5, 2022
A high throughput generative vector autoregression model for stochastic synapsesTyler Hennen, Alexander Elias, Jean-François Nodin, et al.
Physical Chemistry Chemical Physics : PCCP|October 18, 2011
Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO3Christian Lenser, Aleksandr Kalinko, Alexei Kuzmin, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2018
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte NanodotsAlpana Nayak, Satomi Unayama, Seishiro Tai, et al.
Nanoscale Horizons|March 21, 2024
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devicesPascal Stasner, Nils Kopperberg, Kristoffer Schnieders, et al.
Scientific Reports|May 6, 2025
Origin of the inhomogeneous nanoscale resistivity in chromium doped V<sub>2</sub>O<sub>3</sub>Johannes Mohr, Yudi Wang, Xiaoyu Xu, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 7, 2017
Electrochemical Tantalum Oxide for Resistive Switching MemoriesAndrea Zaffora, Deok-Yong Cho, Kug-Seung Lee, et al.
Chemical Communications (Cambridge, England)|July 21, 2004
Mononuclear precursor for MOCVD of HfO2 thin filmsArne Baunemann, Reji Thomas, Ralf Becker, et al.
Pageof 11