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Nanoscale Research Letters|August 20, 2014
Copper pillar and memory characteristics using Al2O3 switching material for 3D architectureSiddheswar Maikap, Rajeswar Panja, Debanjan JanaNanoscale Research Letters|June 20, 2015
Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory applicationRajeswar Panja, Sourav Roy, Debanjan Jana, et al.Nanoscale Research Letters|May 16, 2015
Conductive-bridging random access memory: challenges and opportunity for 3D architectureDebanjan Jana, Sourav Roy, Rajeswar Panja, et al.Scientific Reports|September 13, 2017
Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detectionSubhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, et al.Pageof 1