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Scientific Reports|January 26, 2019
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale TransistorsJi Ung Lee, Ramya Cuduvally, Prathamesh Dhakras, et al.
Ultramicroscopy|August 29, 2024
The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomographyBavley Guerguis, Ramya Cuduvally, Richard J H Morris, et al.
Ultramicroscopy|January 10, 2020
Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAsRamya Cuduvally, Richard J H Morris, Piero Ferrari, et al.
Ultramicroscopy|July 28, 2019
Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantificationRichard J H Morris, Ramya Cuduvally, Davit Melkonyan, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|January 13, 2025
In Situ Focused Ion Beam Redeposition Surface Coatings for Site-Specific, Near-Surface Characterization by Atom Probe TomographyBavley Guerguis, Ramya Cuduvally, Gabriel Arcuri, et al.
Ultramicroscopy|August 21, 2022
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlNRichard J H Morris, Ramya Cuduvally, Jhao-Rong Lin, et al.
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