Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Richard A Soref

Showing results (21-30 of 32) with videos related to

Pageof 4
Sort By:
Sensors (Basel, Switzerland)|December 17, 2024
Phase-Change-Material-Based True Time-Delay SystemRahuldas Kutteeri, Martino De Carlo, Francesco De Leonardis, et al.
Sensors (Basel, Switzerland)|June 10, 2022
Non-Hermitian Sensing in Photonics and Electronics: A ReviewMartino De Carlo, Francesco De Leonardis, Richard A Soref, et al.
Optics Letters|March 13, 2020
GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2  µm wavelength bandCheng-Hsun Tsai, Bo-Jun Huang, Richard A Soref, et al.
ACS Nano|January 21, 2011
Si/Ge junctions formed by nanomembrane bondingArnold M Kiefer, Deborah M Paskiewicz, Anna M Clausen, et al.
Applied Optics|January 7, 2017
Ge<sub>0.975</sub>Sn<sub>0.025</sub> 320  ×  256 imager chip for 1.6-1.9  μm infrared visionChiao Chang, Hui Li, Chien-Te Ku, et al.
Materials (Basel, Switzerland)|February 15, 2022
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power DensityChiao Chang, Hung-Hsiang Cheng, Gary A Sevison, et al.
Optics Express|November 3, 2017
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detectionThach Pham, Wei Du, Huong Tran, et al.
Optics Express|July 1, 2014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detectionBenjamin R Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, et al.
Optics Letters|November 4, 2008
Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavityLiu Liu, Joris Van Campenhout, Günther Roelkens, et al.
Optics Letters|October 2, 2018
Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3Wei Dou, Yiyin Zhou, Joe Margetis, et al.
Pageof 4

Showing results (21-30 of 32) with videos related to

Sort By:
Pageof 4
Sensors (Basel, Switzerland)|December 17, 2024
Phase-Change-Material-Based True Time-Delay SystemRahuldas Kutteeri, Martino De Carlo, Francesco De Leonardis, et al.
Sensors (Basel, Switzerland)|June 10, 2022
Non-Hermitian Sensing in Photonics and Electronics: A ReviewMartino De Carlo, Francesco De Leonardis, Richard A Soref, et al.
Optics Letters|March 13, 2020
GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2  µm wavelength bandCheng-Hsun Tsai, Bo-Jun Huang, Richard A Soref, et al.
ACS Nano|January 21, 2011
Si/Ge junctions formed by nanomembrane bondingArnold M Kiefer, Deborah M Paskiewicz, Anna M Clausen, et al.
Applied Optics|January 7, 2017
Ge<sub>0.975</sub>Sn<sub>0.025</sub> 320  ×  256 imager chip for 1.6-1.9  μm infrared visionChiao Chang, Hui Li, Chien-Te Ku, et al.
Materials (Basel, Switzerland)|February 15, 2022
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power DensityChiao Chang, Hung-Hsiang Cheng, Gary A Sevison, et al.
Optics Express|November 3, 2017
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detectionThach Pham, Wei Du, Huong Tran, et al.
Optics Express|July 1, 2014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detectionBenjamin R Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, et al.
Optics Letters|November 4, 2008
Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavityLiu Liu, Joris Van Campenhout, Günther Roelkens, et al.
Optics Letters|October 2, 2018
Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3Wei Dou, Yiyin Zhou, Joe Margetis, et al.
Pageof 4