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Scientific Reports|May 19, 2022
Noise logic with an InGaN/SiNx/Si uniband diode photodetectorJiaxun Song, Richard NötzelNanoscale Advances|September 22, 2022
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growthJinyou Xu, Xingyu Wang, Richard NötzelACS Omega|January 17, 2022
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and SensingLingyun Xie, Yongjie Chen, Yingzhi Zhao, et al.Langmuir : the ACS Journal of Surfaces and Colloids|October 27, 2023
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water SplittingHao Hong, Jiaxun Song, Xingchen Pan, et al.Optics Express|September 10, 2020
Enhanced terahertz radiation from InAs (100) with an embedded InGaAs hole blocking layerChangkun Song, Peng Wang, Yinping Qian, et al.ACS Omega|December 30, 2020
Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum DotsLujia Rao, Peng Wang, Yinping Qian, et al.Optics Express|May 9, 2023
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111)Xingchen Pan, Jiaxun Song, Hao Hong, et al.Scientific Reports|January 27, 2025
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realizedXuan Pu, Rongli Deng, Guanzhao Yang, et al.ACS Omega|July 19, 2021
One-Compartment InGaN Nanowire Fuel Cell in the Light and Dark Operating ModesYongjie Chen, Hedong Chen, Jiaxun Song, et al.Nanoscale|April 8, 2020
Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxyPeng Wang, Hedong Chen, Hao Wang, et al.Pageof 3