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Robert A Burke

Showing results (1-10 of 13) with videos related to

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Nanotechnology|May 7, 2009
The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor depositionXiaojun Weng, Robert A Burke, Joan M Redwing
Nanotechnology|February 25, 2015
Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and grapheneMatin Amani, Robert A Burke, Robert M Proie, et al.
ACS Applied Materials & Interfaces|July 25, 2020
Hydrogen Plasma Exposure of Monolayer MoS<sub>2</sub> Field-Effect Transistors and Prevention of Desulfurization by Monolayer GrapheneAnishkumar Soman, Robert A Burke, Qiu Li, et al.
Scientific Reports|December 21, 2016
Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic LayersSina Najmaei, Sidong Lei, Robert A Burke, et al.
Nanoscale Advances|September 22, 2022
Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures <i>via</i> selective-area van der Waals epitaxyMohadeseh A Baboli, Alireza Abrand, Robert A Burke, et al.
Nano Letters|March 21, 2018
Giant Mechano-Optoelectronic Effect in an Atomically Thin SemiconductorWei Wu, Jin Wang, Peter Ercius, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 17, 2018
Cross-Plane Carrier Transport in Van der Waals Layered MaterialsSina Najmaei, Mahesh R Neupane, Barbara M Nichols, et al.
Nano Letters|May 17, 2018
Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick GatesYibo Zhu, Yijun Li, Ghidewon Arefe, et al.
ACS Nano|June 14, 2016
High Luminescence Efficiency in MoS2 Grown by Chemical Vapor DepositionMatin Amani, Robert A Burke, Xiang Ji, et al.
Nanoscale|December 8, 2017
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenidesKehao Zhang, Bhakti Jariwala, Jun Li, et al.
Pageof 2

Showing results (1-10 of 13) with videos related to

Sort By:
Pageof 2
Nanotechnology|May 7, 2009
The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor depositionXiaojun Weng, Robert A Burke, Joan M Redwing
Nanotechnology|February 25, 2015
Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and grapheneMatin Amani, Robert A Burke, Robert M Proie, et al.
ACS Applied Materials & Interfaces|July 25, 2020
Hydrogen Plasma Exposure of Monolayer MoS<sub>2</sub> Field-Effect Transistors and Prevention of Desulfurization by Monolayer GrapheneAnishkumar Soman, Robert A Burke, Qiu Li, et al.
Scientific Reports|December 21, 2016
Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic LayersSina Najmaei, Sidong Lei, Robert A Burke, et al.
Nanoscale Advances|September 22, 2022
Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures <i>via</i> selective-area van der Waals epitaxyMohadeseh A Baboli, Alireza Abrand, Robert A Burke, et al.
Nano Letters|March 21, 2018
Giant Mechano-Optoelectronic Effect in an Atomically Thin SemiconductorWei Wu, Jin Wang, Peter Ercius, et al.
Small (Weinheim an Der Bergstrasse, Germany)|April 17, 2018
Cross-Plane Carrier Transport in Van der Waals Layered MaterialsSina Najmaei, Mahesh R Neupane, Barbara M Nichols, et al.
Nano Letters|May 17, 2018
Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick GatesYibo Zhu, Yijun Li, Ghidewon Arefe, et al.
ACS Nano|June 14, 2016
High Luminescence Efficiency in MoS2 Grown by Chemical Vapor DepositionMatin Amani, Robert A Burke, Xiang Ji, et al.
Nanoscale|December 8, 2017
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenidesKehao Zhang, Bhakti Jariwala, Jun Li, et al.
Pageof 2