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Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates
Yibo Zhu1, Yijun Li1, Ghidewon Arefe1
1Department of Mechanical Engineering , Columbia University , New York , New York 10027 , United States.
Nano Letters
|May 17, 2018
Summary
We developed advanced molybdenum disulfide transistors using graphene gates. This innovation significantly reduces contact resistance and improves device performance for next-generation electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Two-dimensional transition-metal dichalcogenides (TMDs) show promise for next-generation electronics.
- High contact resistance and difficulty integrating ultrathin dielectrics hinder TMD device performance.
- Dangling bonds on TMD surfaces complicate the integration of high-k dielectric layers.
Purpose of the Study:
- To present monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) utilizing bottom local gates made of monolayer graphene.
- To address challenges in contact resistance and dielectric integration in TMD-based electronics.
Main Methods:
- Fabrication of MoS2 FETs with bottom graphene gates.
- Integration of ultrathin HfO2 dielectric layers.
- Characterization of device performance, including contact resistance, switching characteristics, and short-channel effects.
Main Results:
- Graphene gates facilitated high-quality ultrathin HfO2 growth, suppressing gate leakage.
- Reduced Ni/MoS2 contact resistance to 2.3 kΩ·μm via electrostatic doping with strong displacement fields.
- Achieved excellent switching characteristics: near-ideal subthreshold slope (64 mV/decade), low threshold voltage (∼0.5 V), high channel conductance (>100 μS/μm), and low hysteresis.
- Demonstrated immunity to short-channel effects in scaled devices and high performance on flexible substrates.
Conclusions:
- Monolayer graphene gates enable high-performance MoS2 transistors by mitigating contact resistance and improving dielectric integration.
- The developed devices show potential for next-generation electronics, including flexible and transparent applications.
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