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Roy H Olsson

Showing results (21-30 of 27) with videos related to

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Nano Letters|March 17, 2025
Al<sub>0.68</sub>Sc<sub>0.32</sub>N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °CYunfei He, David C Moore, Yubo Wang, et al.
ACS Nano|June 25, 2024
Chemically Driven Sintering of Colloidal Cu Nanocrystals for Multiscale Electronic and Optical DevicesJun Xu, Tianshuo Zhao, Anne-Marie Zaccarin, et al.
ACS Nano|January 25, 2024
Tuning Polarity in WSe<sub>2</sub>/AlScN FeFETs via Contact EngineeringKwan-Ho Kim, Seunguk Song, Bumho Kim, et al.
Nano Letters|September 19, 2022
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric DiodesXiwen Liu, John Ting, Yunfei He, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 9, 2025
2D, Physical-Vapor Growth of Low-Coercivity, Epitaxial Ferroelectric Sc<sub>0.3</sub>Al<sub>0.7</sub>N on Scalable SubstratesYu Yun, Liyan Wu, Drew Behrendt, et al.
ACS Applied Materials & Interfaces|April 14, 2021
Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and BeyondYiwen Song, Carlos Perez, Giovanni Esteves, et al.
Nature Nanotechnology|May 22, 2023
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, et al.
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Showing results (21-30 of 27) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 27 results.
Nano Letters|March 17, 2025
Al<sub>0.68</sub>Sc<sub>0.32</sub>N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °CYunfei He, David C Moore, Yubo Wang, et al.
ACS Nano|June 25, 2024
Chemically Driven Sintering of Colloidal Cu Nanocrystals for Multiscale Electronic and Optical DevicesJun Xu, Tianshuo Zhao, Anne-Marie Zaccarin, et al.
ACS Nano|January 25, 2024
Tuning Polarity in WSe<sub>2</sub>/AlScN FeFETs via Contact EngineeringKwan-Ho Kim, Seunguk Song, Bumho Kim, et al.
Nano Letters|September 19, 2022
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric DiodesXiwen Liu, John Ting, Yunfei He, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 9, 2025
2D, Physical-Vapor Growth of Low-Coercivity, Epitaxial Ferroelectric Sc<sub>0.3</sub>Al<sub>0.7</sub>N on Scalable SubstratesYu Yun, Liyan Wu, Drew Behrendt, et al.
ACS Applied Materials & Interfaces|April 14, 2021
Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and BeyondYiwen Song, Carlos Perez, Giovanni Esteves, et al.
Nature Nanotechnology|May 22, 2023
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, et al.
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