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Nature Communications|February 22, 2025
Low-temperature pressure-assisted liquid-metal printing for β-Ga2O3 thin-film transistorsChi-Hsin Huang, Ruei-Hong Cyu, Yu-Lun Chueh, et al.ACS Applied Materials & Interfaces|October 25, 2024
Ultrathin α-Bi2O3 Thin-Film Transistor for Cost-Effective Oxide-TFT InvertersLiang Zhang, Chi-Hsin Huang, Ruei-Hong Cyu, et al.Small Methods|December 16, 2024
Two-Dimensional Transition Metal Dichalcogenides (2D TMDs) Coupled With Zero-Dimensional Nanomaterials (0D NMs) for Advanced PhotodetectionMing-Jin Liu, Shin-Yi Tang, Ruei-Hong Cyu, et al.Nanoscale|May 22, 2024
Rational design of comb-like 1D-1D ZnO-ZnSe heterostructures toward their excellent performance in flexible photodetectorsMing-Jin Liu, Hsuan-Chu Chen, Tse-Ning Yang, et al.ACS Applied Materials & Interfaces|December 1, 2025
Nickel-Assisted Laser Oxidation of WSe2 Layered Films for Spatially Controlled WO3 Patterning Process toward Resistive Memory and Molecular SensingYu-Chieh Hsu, Ruei-Hong Cyu, Yu-Qi Huang, et al.ACS Applied Materials & Interfaces|June 11, 2024
Rational Design of Phase-Engineered WS2/WSe2 Heterostructures by Low-Temperature Plasma-Assisted Sulfurization and Selenization toward Enhanced HER PerformanceBushra Rehman, K M M D K Kimbulapitiya, Manisha Date, et al.Materials Horizons|October 4, 2025
Stabilizing Pt-Fe dual-metal single atoms in ZIFs: a pathway to form heterogeneous catalystsKai-Yuan Hsiao, Yi-Dong Lin, Yu-Ru Lin, et al.Small Methods|November 20, 2025
Conformal Encapsulation of Wafer-Scale Molybdenum Disulfide Field-Effect Transistors by Plasma-Induced Molecular PolymerizationMing-Jin Liu, Yong Wang, Ruei-Hong Cyu, et al.Small (Weinheim an Der Bergstrasse, Germany)|March 20, 2026
Enhanced Selectivity of Hydrogen Sulfide Gas by Hybrid Zeolitic Imidazolate Framework-67/2D Platinum Diselenide-Based Sensors Toward Wafer-Scale ProductionTzu-Wen Kuo, Paul Albert L Sino, Hai-Feng Huang, et al.ACS Applied Materials & Interfaces|October 14, 2025
Direct Formation of Stable 1T' Molybdenum Telluride (MoTe2) by Laser Annealing Processes as Robust Contacts for High-Performance Molybdenum Disulfide (MoS2) Field Effect TransistorsYao-Zen Kuo, Ming-Jin Liu, Paul Albert Sino, et al.Pageof 2