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ACS Nano|December 27, 2022
Rational Design on Polymorphous Phase Switching in Molybdenum Diselenide-Based Memristor Assisted by All-Solid-State Reversible Intercalation toward Neuromorphic ApplicationLing Lee, Chun-Hsiu Chiang, Ying-Chun Shen, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 24, 2024
High-Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n-MoS2 and p-WSe2Ming-Jin Liu, Wei-Jie Lan, Cai-Syuan Huang, et al.
ACS Nano|April 8, 2024
Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping LayersSumayah-Shakil Wani, Chen Chieh Hsu, Yao-Zen Kuo, et al.
ACS Applied Materials & Interfaces|April 3, 2025
Improved Metal-Semiconductor Interface in Monolayer (1L)-MoS2 via Thermally-Driven Ag Filaments as Atomic Scale Edge Contacts Triggered by Selective Annealing Process Using Long Wavelength (1064 nm) Pulsed LaserSumayah-Shakil Wani, Yao-Ren Kuo, K M M D K Kimbulapitiya, et al.
Small Science|April 11, 2025
Design of Versatile Top-Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi-Supporting Layers Toward All-Transfer Transition Metal Dichalcogenide Material Based Transistor ArraysYing-Chun Shen, Bang-Kai Wu, Tsung-Shun Tsai, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 27, 2026
Polarization-Enabled Piezoelectric Tellurium-Selenium (TexSe1- x) Thin Films for Memory Switching and Artificial Synaptic FunctionsChia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, et al.
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