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Ruijing Ge

Showing results (1-10 of 9) with videos related to

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Nanotechnology|July 11, 2020
Understanding of multiple resistance states by current sweeping in MoS<sub>2</sub>-based non-volatile memory devicesXiaohan Wu, Ruijing Ge, Deji Akinwande, et al.
RSC Advances|May 6, 2022
Resistance state evolution under constant electric stress on a MoS<sub>2</sub> non-volatile resistive switching deviceXiaohan Wu, Ruijing Ge, Yifu Huang, et al.
Nature Communications|June 30, 2018
Zero-static power radio-frequency switches based on MoS<sub>2</sub> atomristorsMyungsoo Kim, Ruijing Ge, Xiaohan Wu, et al.
Nanoscale Research Letters|June 20, 2015
Electrodeposition of porous graphene networks on nickel foams as supercapacitor electrodes with high capacitance and remarkable cyclic stabilityShaolin Yang, Bingchen Deng, Ruijing Ge, et al.
Nano Letters|December 14, 2017
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal DichalcogenidesRuijing Ge, Xiaohan Wu, Myungsoo Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 19, 2019
Thinnest Nonvolatile Memory Based on Monolayer h-BNXiaohan Wu, Ruijing Ge, Po-An Chen, et al.
Nature Nanotechnology|November 10, 2020
Observation of single-defect memristor in an MoS<sub>2</sub> atomic sheetSaban M Hus, Ruijing Ge, Po-An Chen, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 28, 2020
A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching PhenomenonRuijing Ge, Xiaohan Wu, Liangbo Liang, et al.
ACS Nano|February 21, 2022
Wafer-Scalable Single-Layer Amorphous Molybdenum TrioxideMd Hasibul Alam, Sayema Chowdhury, Anupam Roy, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Nanotechnology|July 11, 2020
Understanding of multiple resistance states by current sweeping in MoS<sub>2</sub>-based non-volatile memory devicesXiaohan Wu, Ruijing Ge, Deji Akinwande, et al.
RSC Advances|May 6, 2022
Resistance state evolution under constant electric stress on a MoS<sub>2</sub> non-volatile resistive switching deviceXiaohan Wu, Ruijing Ge, Yifu Huang, et al.
Nature Communications|June 30, 2018
Zero-static power radio-frequency switches based on MoS<sub>2</sub> atomristorsMyungsoo Kim, Ruijing Ge, Xiaohan Wu, et al.
Nanoscale Research Letters|June 20, 2015
Electrodeposition of porous graphene networks on nickel foams as supercapacitor electrodes with high capacitance and remarkable cyclic stabilityShaolin Yang, Bingchen Deng, Ruijing Ge, et al.
Nano Letters|December 14, 2017
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal DichalcogenidesRuijing Ge, Xiaohan Wu, Myungsoo Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|February 19, 2019
Thinnest Nonvolatile Memory Based on Monolayer h-BNXiaohan Wu, Ruijing Ge, Po-An Chen, et al.
Nature Nanotechnology|November 10, 2020
Observation of single-defect memristor in an MoS<sub>2</sub> atomic sheetSaban M Hus, Ruijing Ge, Po-An Chen, et al.
Advanced Materials (Deerfield Beach, Fla.)|December 28, 2020
A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching PhenomenonRuijing Ge, Xiaohan Wu, Liangbo Liang, et al.
ACS Nano|February 21, 2022
Wafer-Scalable Single-Layer Amorphous Molybdenum TrioxideMd Hasibul Alam, Sayema Chowdhury, Anupam Roy, et al.
Pageof 1