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S Prucnal

Showing results (1-10 of 5) with videos related to

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The Review of Scientific Instruments|May 2, 2009
Arc discharge ion source for europium and other refractory metals implantationM Turek, S Prucnal, A Droździel, et al.
Scientific Reports|February 10, 2015
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxyShengqiang Zhou, Fang Liu, S Prucnal, et al.
Nanotechnology|September 8, 2018
Formation of n- and p-type regions in individual Si/SiO<sub>2</sub> core/shell nanowires by ion beam dopingY Berencén, S Prucnal, W Möller, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 6, 2023
Evolution of point defects in pulsed-laser-melted Ge<sub>1-</sub>Sn<i></i>probed by positron annihilation lifetime spectroscopyO Steuer, M O Liedke, M Butterling, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 17, 2022
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingO Steuer, D Schwarz, M Oehme, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
The Review of Scientific Instruments|May 2, 2009
Arc discharge ion source for europium and other refractory metals implantationM Turek, S Prucnal, A Droździel, et al.
Scientific Reports|February 10, 2015
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxyShengqiang Zhou, Fang Liu, S Prucnal, et al.
Nanotechnology|September 8, 2018
Formation of n- and p-type regions in individual Si/SiO<sub>2</sub> core/shell nanowires by ion beam dopingY Berencén, S Prucnal, W Möller, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 6, 2023
Evolution of point defects in pulsed-laser-melted Ge<sub>1-</sub>Sn<i></i>probed by positron annihilation lifetime spectroscopyO Steuer, M O Liedke, M Butterling, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|November 17, 2022
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingO Steuer, D Schwarz, M Oehme, et al.
Pageof 1