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The Review of Scientific Instruments|August 3, 2017
In situ multi-dimensional actuation measurement method for tensile actuation of paraffin-infiltrated multi-wall carbon nanotube yarnsDang Xuan Dang, Thuy Kieu Truong, Seong Chu Lim, et al.
ACS Applied Materials & Interfaces|November 26, 2024
Achieving Quasi Intrinsic MoS2 Performance via Liquid-Based Neutralization of Material and Interface Defects with H+ ProtonsByungwook Ahn, Jaehun Ahn, Meeree Kim, et al.
Nano Letters|January 22, 2026
Two-Dimensional Metal-Insulator Transition in Ultrathin VO2 Nanosheets via Remote van der Waals EpitaxySu-Ar Oh, Yuseong Heo, Young-Min Kim, et al.
Nanotechnology|May 4, 2019
Reduced interfacial fluctuation leading enhanced mobility in a monolayer MoS2 DG FET under low vertical electric fieldHyunjin Ji, Hojoon Yi, Sakong Wonkil, et al.
Scientific Reports|November 14, 2013
Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generationYounghwan Choi, Sangwan Sim, Seong Chu Lim, et al.
Nanoscale|June 7, 2018
Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistorHyunjin Ji, Hojoon Yi, Jinbong Seok, et al.
ACS Nano|April 3, 2019
Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness VariationNgoc Thanh Duong, Juchan Lee, Seungho Bang, et al.
ACS Applied Materials & Interfaces|February 15, 2019
Defect-Affected Photocurrent in MoTe2 FETsMohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul, et al.
Nanotechnology|October 7, 2023
Investigating charge traps in MoTe2field-effect transistors: SiO2insulator traps and MoTe2bulk trapsGiheon Kim, Dang Xuan Dang, Hamza Zad Gul, et al.
Journal of Nanoscience and Nanotechnology|August 3, 2005
Multiwalled carbon nanotube bridges and junctions using nanomanipulatorsKeun Soo Kim, Im Bok Lee, Seong Chu Lim, et al.
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