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Materials (Basel, Switzerland)|November 13, 2021
Investigation of Cation Exchange Behaviors of FAxMA1-xPbI3 Films Using Dynamic Spin-CoatingHyang Mi Yu, Byeong Geun Jeong, Dae Young Park, et al.
ACS Nano|March 15, 2017
Charge Transport in MoS2/WSe2 van der Waals Heterostructure with Tunable Inversion LayerManh-Ha Doan, Youngjo Jin, Subash Adhikari, et al.
Nanotechnology|March 13, 2020
Thickness effect on low-power driving of MoS2 transistors in balanced double-gate fieldsHyunjin Ji, Byoung Hee Moon, Hojoon Yi, et al.
ACS Applied Materials & Interfaces|September 28, 2020
Effects of Surface Modifications to Single and Multilayer Graphene Temperature Coefficient of ResistanceJorge Torres, Yulin Liu, Seth So, et al.
Small Methods|April 4, 2026
Self-Incandescent Heating-Driven Microstructural Consolidation of Biscrolled Cu/CNT Yarns for Reduced Frequency-Dependent AC ResistanceFeng Wang, Yoojoo Yun, Jung Hyun Ryu, et al.
ACS Applied Materials & Interfaces|August 9, 2017
Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap SitesHyunjin Ji, Min-Kyu Joo, Hojoon Yi, et al.
Nano Letters|October 7, 2011
Negative and positive persistent photoconductance in grapheneChandan Biswas, Fethullah Güneş, Dinh Loc Duong, et al.
ACS Nano|February 12, 2011
Thermionic field emission transport in carbon nanotube transistorsDavid J Perello, Seong Chu Lim, Seung Jin Chae, et al.
Nano Letters|August 28, 2024
Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D TeGiheon Kim, Jaeuk Bahng, Jaemo Jeong, et al.
Scientific Reports|September 17, 2013
Ultrafast zero balance of the oscillator-strength sum rule in grapheneJaeseok Kim, Seong Chu Lim, Seung Jin Chae, et al.
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