Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Seonghwan Hong

Showing results (1-10 of 8) with videos related to

Pageof 1
Sort By:
ACS Applied Materials & Interfaces|October 20, 2018
Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable ElectronicsJae Won Na, Hee Jun Kim, Seonghwan Hong, et al.
ACS Applied Materials & Interfaces|November 18, 2014
Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layerJi Hoon Park, Yeong-Gyu Kim, Seokhyun Yoon, et al.
ACS Applied Materials & Interfaces|March 17, 2017
Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation LayerKwan Yup Shin, Young Jun Tak, Won-Gi Kim, et al.
ACS Applied Materials & Interfaces|October 28, 2024
Improving Bulk and Interfacial Lithium Transport in Garnet-Type Solid Electrolytes through Microstructure Optimization for High-Performance All-Solid-State BatteriesYoung-Geun Lee, Seonghwan Hong, Bonian Pan, et al.
ACS Applied Materials & Interfaces|August 17, 2017
Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution ProcessJae Won Na, You Seung Rim, Hee Jun Kim, et al.
Scientific Reports|November 28, 2017
Low-temperature fabrication of an HfO<sub>2</sub> passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution processSeonghwan Hong, Sung Pyo Park, Yeong-Gyu Kim, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film TransistorsSeonghwan Hong, Jae Won Na, I Sak Lee, et al.
Scientific Reports|October 1, 2017
The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide filmsHong Jae Kim, Young Jun Tak, Sung Pyo Park, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|October 20, 2018
Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable ElectronicsJae Won Na, Hee Jun Kim, Seonghwan Hong, et al.
ACS Applied Materials & Interfaces|November 18, 2014
Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layerJi Hoon Park, Yeong-Gyu Kim, Seokhyun Yoon, et al.
ACS Applied Materials & Interfaces|March 17, 2017
Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation LayerKwan Yup Shin, Young Jun Tak, Won-Gi Kim, et al.
ACS Applied Materials & Interfaces|October 28, 2024
Improving Bulk and Interfacial Lithium Transport in Garnet-Type Solid Electrolytes through Microstructure Optimization for High-Performance All-Solid-State BatteriesYoung-Geun Lee, Seonghwan Hong, Bonian Pan, et al.
ACS Applied Materials & Interfaces|August 17, 2017
Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution ProcessJae Won Na, You Seung Rim, Hee Jun Kim, et al.
Scientific Reports|November 28, 2017
Low-temperature fabrication of an HfO<sub>2</sub> passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution processSeonghwan Hong, Sung Pyo Park, Yeong-Gyu Kim, et al.
ACS Applied Materials & Interfaces|August 19, 2020
Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film TransistorsSeonghwan Hong, Jae Won Na, I Sak Lee, et al.
Scientific Reports|October 1, 2017
The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide filmsHong Jae Kim, Young Jun Tak, Sung Pyo Park, et al.
Pageof 1