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Servin Rathi

Showing results (1-10 of 17) with videos related to

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ACS Applied Materials & Interfaces|June 5, 2015
Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas SensorJianwei Wang, Servin Rathi, Budhi Singh, et al.
ACS Applied Materials & Interfaces|August 21, 2014
Conductance control in VO2 nanowires by surface doping with gold nanoparticlesGil-Ho Kim, Youngreal Kwak, Inyeal Lee, et al.
Nanotechnology|July 6, 2016
Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrodeLijun Li, Inyeal Lee, Dongsuk Lim, et al.
Nanotechnology|October 22, 2015
Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe₂ field-effect transistorInyeal Lee, Servin Rathi, Lijun Li, et al.
ACS Applied Materials & Interfaces|October 25, 2014
Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devicesServin Rathi, In-yeal Lee, Jin-Hyung Park, et al.
ACS Applied Materials & Interfaces|June 26, 2018
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS<sub>2</sub>/WSe<sub>2</sub> van der Waals HeterostructureMuhammad Atif Khan, Servin Rathi, Changhee Lee, et al.
ACS Applied Materials & Interfaces|July 18, 2017
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS<sub>2</sub> DeviceMuhammad Atif Khan, Servin Rathi, Jinwoo Park, et al.
Nanotechnology|July 5, 2017
Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensorA Venkatesan, Servin Rathi, In-Yeal Lee, et al.
Nanotechnology|April 22, 2016
High performance MoS2-based field-effect transistor enabled by hydrazine dopingDongsuk Lim, E S Kannan, Inyeal Lee, et al.
Nanotechnology|May 23, 2018
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS<sub>2</sub> flake based field effect transistors on SiO<sub>2</sub> and hBN substratesChanghee Lee, Servin Rathi, Muhammad Atif Khan, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
ACS Applied Materials & Interfaces|June 5, 2015
Alternating Current Dielectrophoresis Optimization of Pt-Decorated Graphene Oxide Nanostructures for Proficient Hydrogen Gas SensorJianwei Wang, Servin Rathi, Budhi Singh, et al.
ACS Applied Materials & Interfaces|August 21, 2014
Conductance control in VO2 nanowires by surface doping with gold nanoparticlesGil-Ho Kim, Youngreal Kwak, Inyeal Lee, et al.
Nanotechnology|July 6, 2016
Spin diffusion and non-local spin-valve effect in an exfoliated multilayer graphene with a Co electrodeLijun Li, Inyeal Lee, Dongsuk Lim, et al.
Nanotechnology|October 22, 2015
Non-degenerate n-type doping by hydrazine treatment in metal work function engineered WSe₂ field-effect transistorInyeal Lee, Servin Rathi, Lijun Li, et al.
ACS Applied Materials & Interfaces|October 25, 2014
Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devicesServin Rathi, In-yeal Lee, Jin-Hyung Park, et al.
ACS Applied Materials & Interfaces|June 26, 2018
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS<sub>2</sub>/WSe<sub>2</sub> van der Waals HeterostructureMuhammad Atif Khan, Servin Rathi, Changhee Lee, et al.
ACS Applied Materials & Interfaces|July 18, 2017
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS<sub>2</sub> DeviceMuhammad Atif Khan, Servin Rathi, Jinwoo Park, et al.
Nanotechnology|July 5, 2017
Molybdenum disulfide nanoparticles decorated reduced graphene oxide: highly sensitive and selective hydrogen sensorA Venkatesan, Servin Rathi, In-Yeal Lee, et al.
Nanotechnology|April 22, 2016
High performance MoS2-based field-effect transistor enabled by hydrazine dopingDongsuk Lim, E S Kannan, Inyeal Lee, et al.
Nanotechnology|May 23, 2018
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS<sub>2</sub> flake based field effect transistors on SiO<sub>2</sub> and hBN substratesChanghee Lee, Servin Rathi, Muhammad Atif Khan, et al.
Pageof 2