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Seul Ji Song

Showing results (11-20 of 17) with videos related to

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Advanced Materials (Deerfield Beach, Fla.)|February 7, 2013
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodotsJung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, et al.
Scientific Reports|November 4, 2015
Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cellTae Hyung Park, Seul Ji Song, Hae Jin Kim, et al.
Scientific Reports|February 12, 2016
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitorsSeul Ji Song, Yu Jin Kim, Min Hyuk Park, et al.
ACS Applied Materials & Interfaces|June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell AreaJung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
ACS Applied Materials & Interfaces|December 13, 2016
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>3</sub>, Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>2</sub>Cp, and H<sub>2</sub>OSeul Ji Song, Taehyung Park, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces|February 4, 2014
Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodesKatsuhisa Murakami, Mathias Rommel, Boris Hudec, et al.
Nanoscale|September 8, 2016
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memoryXing Long Shao, Kyung Min Kim, Kyung Jean Yoon, et al.
Pageof 2

Showing results (11-20 of 17) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 17 results.
Advanced Materials (Deerfield Beach, Fla.)|February 7, 2013
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodotsJung Ho Yoon, Jeong Hwan Han, Ji Sim Jung, et al.
Scientific Reports|November 4, 2015
Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cellTae Hyung Park, Seul Ji Song, Hae Jin Kim, et al.
Scientific Reports|February 12, 2016
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitorsSeul Ji Song, Yu Jin Kim, Min Hyuk Park, et al.
ACS Applied Materials & Interfaces|June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell AreaJung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
ACS Applied Materials & Interfaces|December 13, 2016
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>3</sub>, Ta(N<sup>t</sup>Bu)(NEt<sub>2</sub>)<sub>2</sub>Cp, and H<sub>2</sub>OSeul Ji Song, Taehyung Park, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces|February 4, 2014
Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodesKatsuhisa Murakami, Mathias Rommel, Boris Hudec, et al.
Nanoscale|September 8, 2016
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memoryXing Long Shao, Kyung Min Kim, Kyung Jean Yoon, et al.
Pageof 2